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DWLP4-06

Description
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, DIE-1
CategoryDiscrete semiconductor    diode   
File Size54KB,1 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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DWLP4-06 Overview

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, DIE-1

DWLP4-06 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionDIE-1
Reach Compliance Codecompliant
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUUC-N1
Number of components1
Phase1
Number of terminals1
Maximum output current15 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Low Leakage Fast Recovery Epitaxial Diode Chips
Preliminary data
Type
V
RRM
V
DWLP 4 - 02
DWLP 15 - 02
DWLP
DWLP
DWLP
DWLP
DWLP
8 - 03
15 - 03
23 - 03
55 - 03
75 - 03
200
300
I
R
I
R
@ 25 °C @ 150 °C
µ
A
50
100
60
100
250
650
1000
100
250
1000
2000
50
60
60
100
250
250
650
1000
60
100
250
650
1000
mA
0.2
0.5
0.25
0.5
1.0
2.5
4.0
0.5
1.0
4.0
8.5
0.2
0.25
0.25
0.5
1.0
2.0
2.5
4.0
0.25
0.5
1.0
2.5
4.0
I
RM
@ I
F
@ 25 °C
µ
di/dt=100 A/µs
A
A
2.4
2.4
1.4
1.6
4
2.8
3.2
3.7
4
4
9.5
2.6
2.6
1.1
2.9
3.5
2
4.9
6
5
5.7
6.7
8.4
9.5
10
25
12
25
50
130
200
25
50
200
500
10
12
12
25
50
50
130
200
12
25
50
130
200
V
F
@ I
F
@ 150 °C
V
0.83
0.79
1.06
1.06
0.84
1.04
1.05
0.99
1.02
0.98
1.04
1.28
1.27
1.45
1.26
1.18
1.49
1.24
1.25
1.65
1.64
1.72
1.6
1.62
A
5
12
6
12
30
60
100
12
30
100
300
5
6
6
12
30
30
60
100
6
12
30
60
100
V
TO
r
T
@ 175 °C
V
0.60
0.65
0.84
0.84
0.63
0.83
0.83
0.77
0.79
0.76
0.82
0.98
0.97
1.02
0.97
0.91
1.04
0.95
0.96
1.09
1.09
1.12
1.07
1.07
mΩ
30.0
7.3
17.5
8.6
4.5
1.7
1.0
10.7
4.6
1.3
0.5
32.5
26.0
37.9
12.8
6.1
8.2
2.4
1.5
61.0
29.9
13.4
5.6
3.5
I
FAVM
@ R
th
rect..,
d=0.5∆T=80 °C
A
K/W
19
40
21
35
70
104
171
34
64
167
220
15
17
15
29
56
48
89
144
12
21
40
67
109
2.5
1.6
2.5
1.6
0.9
0.65
0.4
1.6
0.9
0.4
0.35
2.8
2.5
2.5
1.6
0.9
0.9
0.65
0.4
2.5
1.6
0.9
0.65
0.4
Chips
per
Wafer
125 mm∅
1243
®
626
®
1028
®
626
®
518
142
152
®
626
®
518
142
®
47
®
1243
1028
1028
626
518
518
142
152
®
®
®
®
DWLP 15 - 04
DWLP 23 - 04
DWLP 75 - 04
DWLP150 - 04
DWLP
DWLP
DWLP
DWLP
DWLP
DWLP
DWLP
DWLP
DWLP
DWLP
DWLP
DWLP
DWLP
4 - 06
8 - 06 A¬
8 - 06 B­
15 - 06
23 - 06 A¬
23 - 06 B­
55 - 06
75 - 06
8 - 12
15 - 12
23 - 12
55 - 12
75 - 12
400
600
®
1200
1028
®
626
®
518
142
152
®
¬
A = slow version,
­
B = fast version,
®
Wafer 100 mm
Dimensions in
Type
DWLP 4
DWLP 8
DWLP 15
DWLP 23
DWLP 55
DWLP 75
DWLP 150
Tolerance
Anode metalization Al
Si-thick.
A
mm
3.00
3.60
3.25
5.50
8.65
8.91
9.77
-0.1
B
mm
1.80
1.80
3.25
3.50
4.95
7.22
13.00
-0.1
C
mm
2.10
2.70
2.25
4.50
7.65
7.91
8.75
+0.1
D
mm
0.90
0.90
2.25
2.50
3.95
6.22
11.90
+0.1
E
mm
0.25
0.25
0.20
0.20
0.20
0.20
1.90
+0.1
Glass
Cathode metalization Ti/Ni/Ag
Dimensions in inch
Type
DWLP 4
DWLP 8
DWLP 15
DWLP 23
DWLP 55
DWLP 75
DWLP 150
Tolerance
A
inch
0.118
0.142
0.128
0.217
0.341
0.351
0.385
-0.004
B
inch
0.071
0.071
0.128
0.138
0.195
0.284
0.512
-0.004
C
inch
0.083
0.106
0.089
0.177
0.301
0.311
0.344
+.004
D
inch
0.035
0.035
0.089
0.098
0.301
0.245
0.469
+0.004
E
inch
0.010
0.010
0.008
0.008
0.008
0.008
0.075
+0.004
C
A
IXYS reserves the right to change limits, test conditions and dimensions.
E
J - 14
© 2000 IXYS All rights reserved
D
B

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Description Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, DIE-1 Rectifier Diode, 1 Phase, 1 Element, 167A, 400V V(RRM), Silicon, DIE-1 Rectifier Diode, 1 Phase, 1 Element, 17A, 600V V(RRM), Silicon, DIE-1 Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, DIE-1 Rectifier Diode, 1 Phase, 1 Element, 40A, 200V V(RRM), Silicon, DIE-1 Rectifier Diode, 1 Phase, 1 Element, 56A, 600V V(RRM), Silicon, DIE-1 Rectifier Diode, 1 Phase, 1 Element, 48A, 600V V(RRM), Silicon, DIE-1
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker Littelfuse Littelfuse Littelfuse Littelfuse Littelfuse Littelfuse Littelfuse
package instruction DIE-1 DIE-1 DIE-1 DIE-1 DIE-1 R-XUUC-N1 R-XUUC-N1
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XUUC-N1 R-XUUC-N1 R-XUUC-N1 R-XUUC-N1 S-XUUC-N1 R-XUUC-N1 R-XUUC-N1
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 1 1 1 1 1 1 1
Maximum output current 15 A 167 A 17 A 15 A 40 A 56 A 48 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR SQUARE RECTANGULAR RECTANGULAR
Package form UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 400 V 600 V 600 V 200 V 600 V 600 V
surface mount YES YES YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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