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DL-3150-105

Description
LASER DIODE W/MONITOR,790NM PEAK WAVELENGTH,SIP-FLANGE
CategoryLED optoelectronic/LED    photoelectric   
File Size30KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

DL-3150-105 Overview

LASER DIODE W/MONITOR,790NM PEAK WAVELENGTH,SIP-FLANGE

DL-3150-105 Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompliant
Maximum forward current0.06 A
Maximum forward voltage2.3 V
Installation featuresTHROUGH HOLE MOUNT
Maximum operating temperature70 °C
Minimum operating temperature-10 °C
Optoelectronic device typesLASER DIODE
peak wavelength790 nm
Semiconductor materialGaAs
surface mountNO
Ordering number : ENN7564
DL-3150-105
Infrared Laser Diode
DL-3150-105
Infrared Laser Diode (Frame Type)
Features
Wavelength : 790 nm (Typ.)
Frame type
Compact lightweight thin package
Straight leads
Package Dimensions
0.7±0.12
0.7
3.2
-C
2-
5
0.
1.9
1.6
8.0
--0.1
4.0±0.12
3.7±0.15
1
0
LD facet
3.0±0.1 1.4±0.12
R
0.
5
+
0
1.8
0 .1
2-
Absolute Maximum Ratings at Tc=25
°
C
(as per JISC 7032)
5.0±0.5
3.4
Parameter
Light Output
Laser
Reverse Voltage
PIN
Operating Temperature
Storage Temperature
Symbol Condition
Po
V
R
Topr
Tstg
Kink free
-
-
1)
1)
Ratings
5
2
30
- to +70
-10
- to +85
-40
Unit
mW
V
°C
°C
°C
2 -- 0.4
3 -- 0.4±0.1
(1.6)
Pin No.
3
2
1
Frame type(CD)
Pin Connection
LD
1.4
6.4
1.0
+0.1
0
1
Soldering Temperature Tsol
2)
260
1) Case temperature
2) Soldering Time≤3s, 1.6 mm from the root of a lead.
Electrical and Optical Characteristics
3) 4)
at Tc=25
°
C
Parameter
Threshold Current
Operating Current
Operating Voltage
Peak Lasing Wavelength 5)
Light Output Power
Beam 6)
Perpendicular
Divergence
Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Monitoring Output Current
Symbol
Ith
Iop
Vop
λ
p
Po
θ⊥
θ
//
∆θ⊥
∆ θ
//
dPo/dIop
Im
Condition
CW
Po=3mW
Po=3mW
Po=3mW
-
Po=3mW
Po=3mW
Po=3mW
Po=3mW
Po=3mW
Po=3mW
Min.
-
-
1.6
-
-
25
8
-
-
0.18
0.05
Typ.
35
45
1.8
790
3
35
10
-
-
0.35
0.20
Max.
50
60
2.3
800
-
45
14
±3
±2
-
0.40
2
Unit
mA
mA
V
nm
mW
°
°
°
°
mW/mA
mA
3) Initial values 4) All the above values are evaluated with Tottori Sanyo’s measuring apparatus
5) Wafer lot go/no-go decision criteria 6) Full angle at half maximum
Note : The above product specification are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003 YY IM No.7564 1/3
°
R0.
7
0
+ 0.
3.0±0.15
4.2
3
2--5
±
1
PD
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