MT29F4G08ABBDAH4 datasheet, PDF

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MT29F4G08ABBDAH4: Description4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features; File Size1MB，132 Pages; ManufacturerMicron; Websitehttp://www.micron.com/

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MT29F4G08ABBDAH4 Overview

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

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Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

NAND Flash Memory

MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,

MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,

MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,

MT29F16G08AJADAWP

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks

16Gb: 16,384 blocks

• Asynchronous I/O performance

–

RC/

WC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs

– Program page: 200µs (TYP: 1.8V, 3.3V)

– Erase block: 700µs (TYP)

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Program page cache mode

– Read page cache mode

– One-time programmable (OTP) mode

– Two-plane commands

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for

detecting

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware

method of detecting operation completion

• WP# signal: Write protect entire device

• First block (block address 00h) is valid when ship-

ped from factory with ECC. For minimum required

ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-

cles are less than 1000

• RESET (FFh) required as first command after pow-

er-on

• Alternate method of device initialization (Nand_In-

it) after power up (contact factory)

• Internal data move operations supported within the

plane from which data is read

• Quality and reliability

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range

– V

: 2.7–3.6V

– V

: 1.7–1.95V

• Operating temperature:

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package

– 48-pin TSOP type 1, CPL

– 63-ball VFBGA

Notes:

1. The ONFI 1.0 specification is available at

www.onfi.org.

2. CPL = Center parting line.

3. See Program and Erase Characteristics for

R_ECC and

PROG_ECC specifications.

4. These commands supported only with ECC

disabled.

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

Contents

General Description ......................................................................................................................................... 8

Signal Descriptions ........................................................................................................................................... 8

Signal Assignments ........................................................................................................................................... 9

Package Dimensions ....................................................................................................................................... 12

Architecture ................................................................................................................................................... 15

Device and Array Organization ........................................................................................................................ 16

Asynchronous Interface Bus Operation ........................................................................................................... 20

Asynchronous Enable/Standby ................................................................................................................... 20

Asynchronous Commands .......................................................................................................................... 20

Asynchronous Addresses ............................................................................................................................ 22

Asynchronous Data Input ........................................................................................................................... 23

Asynchronous Data Output ......................................................................................................................... 24

Write Protect# ............................................................................................................................................ 25

Ready/Busy# .............................................................................................................................................. 25

Device Initialization ....................................................................................................................................... 30

Command Definitions .................................................................................................................................... 31

Reset Operations ............................................................................................................................................ 34

RESET (FFh) ............................................................................................................................................... 34

Identification Operations ................................................................................................................................ 35

READ ID (90h) ............................................................................................................................................ 35

READ ID Parameter Tables .............................................................................................................................. 36

READ PARAMETER PAGE (ECh) ...................................................................................................................... 39

Parameter Page Data Structure Tables ............................................................................................................. 40

Bare Die Parameter Page Data Structure Tables ................................................................................................ 45

READ UNIQUE ID (EDh) ................................................................................................................................ 48

Feature Operations ......................................................................................................................................... 49

SET FEATURES (EFh) .................................................................................................................................. 50

GET FEATURES (EEh) ................................................................................................................................. 51

Status Operations ........................................................................................................................................... 54

READ STATUS (70h) ................................................................................................................................... 55

READ STATUS ENHANCED (78h) ................................................................................................................ 55

Column Address Operations ........................................................................................................................... 57

RANDOM DATA READ (05h-E0h) ................................................................................................................ 57

RANDOM DATA READ TWO-PLANE (06h-E0h) ............................................................................................ 58

RANDOM DATA INPUT (85h) ...................................................................................................................... 59

PROGRAM FOR INTERNAL DATA INPUT (85h) ........................................................................................... 60

Read Operations ............................................................................................................................................. 62

READ MODE (00h) ..................................................................................................................................... 64

READ PAGE (00h-30h) ................................................................................................................................ 64

READ PAGE CACHE SEQUENTIAL (31h) ...................................................................................................... 65

READ PAGE CACHE RANDOM (00h-31h) .................................................................................................... 66

READ PAGE CACHE LAST (3Fh) .................................................................................................................. 68

READ PAGE TWO-PLANE 00h-00h-30h ....................................................................................................... 69

Program Operations ....................................................................................................................................... 71

PROGRAM PAGE (80h-10h) ......................................................................................................................... 72

PROGRAM PAGE CACHE (80h-15h) ............................................................................................................. 72

PROGRAM PAGE TWO-PLANE (80h-11h) .................................................................................................... 75

Erase Operations ............................................................................................................................................ 77

ERASE BLOCK (60h-D0h) ............................................................................................................................ 77

ERASE BLOCK TWO-PLANE (60h-D1h) ....................................................................................................... 78

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

Internal Data Move Operations ....................................................................................................................... 79

READ FOR INTERNAL DATA MOVE (00h-35h) ............................................................................................. 80

PROGRAM FOR INTERNAL DATA MOVE (85h–10h) ..................................................................................... 81

PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) ................................................................. 82

Block Lock Feature ......................................................................................................................................... 83

WP# and Block Lock ................................................................................................................................... 83

UNLOCK (23h-24h) .................................................................................................................................... 83

LOCK (2Ah) ................................................................................................................................................ 86

LOCK TIGHT (2Ch) ..................................................................................................................................... 87

BLOCK LOCK READ STATUS (7Ah) .............................................................................................................. 88

One-Time Programmable (OTP) Operations .................................................................................................... 90

Legacy OTP Commands .............................................................................................................................. 90

OTP DATA PROGRAM (80h-10h) ................................................................................................................. 91

RANDOM DATA INPUT (85h) ...................................................................................................................... 92

OTP DATA PROTECT (80h-10) ..................................................................................................................... 93

OTP DATA READ (00h-30h) ......................................................................................................................... 95

Two-Plane Operations .................................................................................................................................... 97

Two-Plane Addressing ................................................................................................................................ 97

Interleaved Die (Multi-LUN) Operations ......................................................................................................... 106

Error Management ........................................................................................................................................ 107

Internal ECC and Spare Area Mapping for ECC ............................................................................................... 109

Electrical Specifications ................................................................................................................................. 111

Electrical Specifications – DC Characteristics and Operating Conditions .......................................................... 113

Electrical Specifications – AC Characteristics and Operating Conditions .......................................................... 115

Electrical Specifications – Program/Erase Characteristics ................................................................................ 118

Asynchronous Interface Timing Diagrams ...................................................................................................... 119

Revision History ............................................................................................................................................ 131

Rev. N – 10/12 ............................................................................................................................................ 131

Rev. M – 02/12 ........................................................................................................................................... 131

Rev. L – 1/12 .............................................................................................................................................. 131

Rev. K – 11/11 ............................................................................................................................................ 131

Rev. J – 09/11 ............................................................................................................................................. 131

Rev. I – 07/11 ............................................................................................................................................. 131

Rev. H – 12/10 ............................................................................................................................................ 131

Rev. G – 10/10 ............................................................................................................................................ 131

Rev. F – 06/10 ............................................................................................................................................ 131

Rev. E – 05/10 ............................................................................................................................................ 131

Rev. D – 03/10 ............................................................................................................................................ 132

Rev. C – 01/10 ............................................................................................................................................ 132

Rev. B – 10/09 ............................................................................................................................................ 132

Rev. A – 07/09 ............................................................................................................................................ 132

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

List of Tables

Table 1: Signal Definitions ............................................................................................................................... 8

Table 2: Array Addressing – MT29F4G08 (x8) .................................................................................................. 16

Table 3: Array Addressing – MT29F4G16 (x16) ................................................................................................. 17

Table 4: Array Addressing – MT29F8G08 and MT29F16G08 (x8) ....................................................................... 18

Table 5: Array Addressing – MT29F8G16 ( x16) ................................................................................................ 19

Table 6: Asynchronous Interface Mode Selection ............................................................................................ 20

Table 7: Command Set .................................................................................................................................. 31

Table 8: Two-Plane Command Set .................................................................................................................. 33

Table 9: READ ID Parameters for Address 00h ................................................................................................. 36

Table 10: READ ID Parameters for Address 20h ............................................................................................... 38

Table 11: Parameter Page Data Structure ........................................................................................................ 40

Table 12: Parameter Page Data Structure ........................................................................................................ 45

Table 13: Feature Address Definitions ............................................................................................................. 49

Table 14: Feature Address 90h – Array Operation Mode ................................................................................... 50

Table 15: Feature Addresses 01h: Timing Mode ............................................................................................... 52

Table 16: Feature Addresses 80h: Programmable I/O Drive Strength ................................................................ 53

Table 17: Feature Addresses 81h: Programmable R/B# Pull-Down Strength ...................................................... 53

Table 18: Status Register Definition ................................................................................................................ 54

Table 19: Block Lock Address Cycle Assignments ............................................................................................ 85

Table 20: Block Lock Status Register Bit Definitions ........................................................................................ 88

Table 21: Error Management Details ............................................................................................................. 107

Table 22: Absolute Maximum Ratings ............................................................................................................ 111

Table 23: Recommended Operating Conditions ............................................................................................. 111

Table 24: Valid Blocks ................................................................................................................................... 111

Table 25: Capacitance ................................................................................................................................... 112

Table 26: Test Conditions .............................................................................................................................. 112

Table 27: DC Characteristics and Operating Conditions (3.3V) ....................................................................... 113

Table 28: DC Characteristics and Operating Conditions (1.8V) ....................................................................... 114

Table 29: AC Characteristics: Command, Data, and Address Input (3.3V) ........................................................ 115

Table 30: AC Characteristics: Command, Data, and Address Input (1.8V) ........................................................ 115

Table 31: AC Characteristics: Normal Operation (3.3V) .................................................................................. 116

Table 32: AC Characteristics: Normal Operation (1.8V) .................................................................................. 116

Table 33: Program/Erase Characteristics ....................................................................................................... 118

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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