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MB81C1001A-10LC

Description
Nibble Mode DRAM, 1MX1, 100ns, CMOS, CDIP18
Categorystorage    storage   
File Size773KB,24 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Download Datasheet Parametric Compare View All

MB81C1001A-10LC Overview

Nibble Mode DRAM, 1MX1, 100ns, CMOS, CDIP18

MB81C1001A-10LC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFUJITSU
Objectid101067306
Parts packaging codeDIP
package instructionDIP, DIP18,.3
Contacts18
Reach Compliance Codeunknown
compound_id9669758
Maximum access time100 ns
I/O typeSEPARATE
JESD-30 codeR-XDIP-T18
JESD-609 codee0
memory density1048576 bit
Memory IC TypeNIBBLE MODE DRAM
memory width1
Number of terminals18
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX1
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum standby current0.00025 A
Maximum slew rate0.054 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

MB81C1001A-10LC Related Products

MB81C1001A-10LC MB81C1001A-80LC MB81C1001A-70LC
Description Nibble Mode DRAM, 1MX1, 100ns, CMOS, CDIP18 Nibble Mode DRAM, 1MX1, 80ns, CMOS, CDIP18 Nibble Mode DRAM, 1MX1, 70ns, CMOS, CDIP18
Is it Rohs certified? incompatible incompatible incompatible
Maker FUJITSU FUJITSU FUJITSU
Parts packaging code DIP DIP DIP
package instruction DIP, DIP18,.3 DIP, DIP18,.3 DIP, DIP18,.3
Contacts 18 18 18
Reach Compliance Code unknown unknow unknow
Maximum access time 100 ns 80 ns 70 ns
I/O type SEPARATE SEPARATE SEPARATE
JESD-30 code R-XDIP-T18 R-XDIP-T18 R-XDIP-T18
JESD-609 code e0 e0 e0
memory density 1048576 bit 1048576 bi 1048576 bi
Memory IC Type NIBBLE MODE DRAM NIBBLE MODE DRAM NIBBLE MODE DRAM
memory width 1 1 1
Number of terminals 18 18 18
word count 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000
Maximum operating temperature 70 °C 70 °C 70 °C
organize 1MX1 1MX1 1MX1
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material CERAMIC CERAMIC CERAMIC
encapsulated code DIP DIP DIP
Encapsulate equivalent code DIP18,.3 DIP18,.3 DIP18,.3
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
power supply 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 512 512 512
Maximum standby current 0.00025 A 0.00025 A 0.00025 A
Maximum slew rate 0.054 mA 0.062 mA 0.068 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL
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