MB81C1001A-80LC datasheet, PDF

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MB81C1001A-80LC: DescriptionNibble Mode DRAM, 1MX1, 80ns, CMOS, CDIP18; Categorystorage storage; File Size773KB，24 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MB81C1001A-80LC Overview

Nibble Mode DRAM, 1MX1, 80ns, CMOS, CDIP18

MB81C1001A-80LC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	FUJITSU
Parts packaging code	DIP
package instruction	DIP, DIP18,.3
Contacts	18
Reach Compliance Code	unknow
Maximum access time	80 ns
I/O type	SEPARATE
JESD-30 code	R-XDIP-T18
JESD-609 code	e0
memory density	1048576 bi
Memory IC Type	NIBBLE MODE DRAM
memory width	1
Number of terminals	18
word count	1048576 words
character code	1000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum standby current	0.00025 A
Maximum slew rate	0.062 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

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MB81C1001A-80LC Related Products

	MB81C1001A-80LC	MB81C1001A-70LC	MB81C1001A-10LC
Description	Nibble Mode DRAM, 1MX1, 80ns, CMOS, CDIP18	Nibble Mode DRAM, 1MX1, 70ns, CMOS, CDIP18	Nibble Mode DRAM, 1MX1, 100ns, CMOS, CDIP18
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	FUJITSU	FUJITSU	FUJITSU
Parts packaging code	DIP	DIP	DIP
package instruction	DIP, DIP18,.3	DIP, DIP18,.3	DIP, DIP18,.3
Contacts	18	18	18
Reach Compliance Code	unknow	unknow	unknown
Maximum access time	80 ns	70 ns	100 ns
I/O type	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XDIP-T18	R-XDIP-T18	R-XDIP-T18
JESD-609 code	e0	e0	e0
memory density	1048576 bi	1048576 bi	1048576 bit
Memory IC Type	NIBBLE MODE DRAM	NIBBLE MODE DRAM	NIBBLE MODE DRAM
memory width	1	1	1
Number of terminals	18	18	18
word count	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000
Maximum operating temperature	70 °C	70 °C	70 °C
organize	1MX1	1MX1	1MX1
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DIP
Encapsulate equivalent code	DIP18,.3	DIP18,.3	DIP18,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
power supply	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512
Maximum standby current	0.00025 A	0.00025 A	0.00025 A
Maximum slew rate	0.062 mA	0.068 mA	0.054 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL
Base Number Matches	1	1	-

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