EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | , |
| Reach Compliance Code | compliant |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 120 ns |
| Other features | ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES |
| Data retention time - minimum | 10 |
| Durability | 10000 Write/Erase Cycles |
| JESD-30 code | S-CQMA-F68 |
| JESD-609 code | e4 |
| memory density | 8388608 bit |
| Memory IC Type | EEPROM MODULE |
| memory width | 16 |
| Number of functions | 1 |
| Number of terminals | 68 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 512KX16 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | SQUARE |
| Package form | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Programming voltage | 5 V |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Gold (Au) |
| Terminal form | FLAT |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
京公网安备 11010802033920号
EEWORLD
