BAT54VV
Schottky barrier triple diode in ultra small SOT666 package
Rev. 02 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier triple diode with an integrated guard ring for stress protection.
Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small
SMD plastic package.
1.2 Features
Low forward voltage
Ultra small SMD plastic package
Low capacitance
Flat leads: excellent coplanarity and improved thermal behavior
1.3 Applications
Ultra high-speed switching
Voltage clamping
Line termination
Inverse-polarity protection
1.4 Quick reference data
Table 1.
Symbol
V
R
I
F
Quick reference data
Parameter
continuous reverse voltage
continuous forward current
Conditions
Min
-
-
Typ
-
-
Max
30
200
Unit
V
mA
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
1
2
3
sym046
Simplified outline
6
5
4
Symbol
6
5
4
cathode (diode 2)
cathode (diode 1)
1
2
3
SOT666
NXP Semiconductors
BAT54VV
Schottky barrier triple diode in ultra small SOT666 package
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT54VV
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
BAT54VV
Marking codes
Marking code
C6
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
Max
30
200
300
600
170
125
+125
+150
Unit
V
mA
mA
mA
mW
°C
°C
°C
t
p
≤
1 s;
δ ≤
0.5
t
p
<
10 ms
T
amb
≤
25
°C
[1][2]
-
-
-
-
−65
−65
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Single diode loaded.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
Min
-
Typ
-
Max
590
Unit
K/W
Refer to SOT666 standard mounting conditions.
Reflow soldering is the only recommended soldering method.
BAT54VV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
2 of 9
NXP Semiconductors
BAT54VV
Schottky barrier triple diode in ultra small SOT666 package
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
see
Figure 1;
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
[1]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
240
320
400
500
800
2
10
mV
mV
mV
mV
mV
μA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 25 V; see
Figure 2
V
R
= 1 V; f = 1 MHz;
see
Figure 3
BAT54VV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
3 of 9
NXP Semiconductors
BAT54VV
Schottky barrier triple diode in ultra small SOT666 package
10
3
I
F
(mA)
10
2
(1) (2) (3)
msa892
10
3
I
R
(μA)
10
2
(2)
(1)
msa893
10
10
1
(1)
(2) (3)
1
(3)
10
−1
0
0.4
0.8
V
F
(V)
1.2
10
−1
0
10
20
V
R
(V)
30
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
(1) T
amb
= 125
°C
(2) T
amb
= 85
°C
(3) T
amb
= 25
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
msa891
15
C
d
(pF)
10
5
0
0
10
20
V
R
(V)
30
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
BAT54VV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
4 of 9
NXP Semiconductors
BAT54VV
Schottky barrier triple diode in ultra small SOT666 package
8. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
Fig 4.
BAT54VV_2
Package outline SOT666.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
5 of 9
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