EEWORLDEEWORLDEEWORLD

Part Number

Search

FSGJ164D1

Description
Power Field-Effect Transistor, 65A I(D), 150V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
CategoryDiscrete semiconductor    The transistor   
File Size97KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FSGJ164D1 Overview

Power Field-Effect Transistor, 65A I(D), 150V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

FSGJ164D1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionFLANGE MOUNT, S-PSFM-P3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)65 A
Maximum drain current (ID)65 A
Maximum drain-source on-resistance0.024 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-PSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)77 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FSGJ164R
Data Sheet
June 2001
File Number
4933
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFET
itle
GJ
R)
bjec
diat
den
GR
ista
Cha
l
wer
SF
tho
yw
s
diat
den
GR
ista
Cha
l
wer
SF
rchi
por
n,
mico
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r
DS(ON)
and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100 krads while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Fairchild FS families have always featured.
TM
Features
• 65A, 150V, r
DS(ON)
= 0.024Ω
• UIS Rated
• Total Dose
- Meets Pre-rad Specifications to 100 krad (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 rad (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
- 14nA Per-rad (Si)/s Typically
• Neutron
- Maintain Pre-rad Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
The Fairchild family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
r
DS(ON)
while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45229W.
Symbol
D
G
S
Packaging
TO-254AA
G
S
D
Ordering Information
RAD LEVEL
10K
100K
100K
SCREENING LEVEL
PART NUMBER/BRAND
Engineering Samples FSGJ164D1
TXV
Space
FSGJ164R3
FSGJ164R4
CAUTION: Beryllia Warning per MIL-PRF-19500
refer to package specifications.
©2001 Fairchild Semiconductor Corporation
FSGJ164R Rev. A2
urgent
It's like this: My company has made a machine (dryer). It is used to dry a non-metallic mineral. The current situation is: 1. The moisture content of the material (small particles) is uncertain, rangi...
aaa1 Embedded System
Introduction to MQTT protocol 2: Connection
[table] [tr][td][float=right][img]http://gg.eefocus.com/www/delivery/lg.php?bannerid=0&campaignid=0&zoneid=462&loc=http%3A%2F%2Fwww.stmcu.org%2Fmodule%2Fforum%2Fthread-613057-1-1.html&cb=12cfe3a149[/i...
z3512641347 Integrated technical exchanges
Operation Hurricane---Learn ARM Cortex-M3 in half a day
I didn't have time to attend the training activity of Liercheng Chengdu Station yesterday. Today, Mr. Wang came to our company to give a private lesson. Here are the latest training materials, sharing...
fengzhang2002 Microcontroller MCU
Renovation plan for centralized monitoring system of various parameters of coal mine ventilation fans
[font=宋体]Coal mine safety accidents are frequent, causing huge losses to the country. The most critical cause of the accidents is gas explosion. The most effective means to prevent gas explosion is to...
LUKEBS Industrial Control Electronics
Can anyone tell me how to get the parameters in put_Owner()? Thank you!
I found a piece of code on the Internet and modified it. HWND hwnd = GetSafeHwnd(); // SetWindowLong(hwnd,GWL_STYLE,GetWindowStyle(hwnd) ?WS_CLIPCHILDREN); hr = pVidWin->put_Owner((OAHWND)hwnd); CStri...
zzc6312833 Embedded System
ATmega128 infrared remote control servo
I am a novice, I have read the information for two weeks, but I still don't understand it. I urgently need the help of all the masters! ! I am very grateful... I need a routine. Use AVR128 microcontro...
零解 Microchip MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1747  1933  1568  427  2265  36  39  32  9  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号