FT08...D
SURFACE MOUNT TRIAC
DPAK
(Plastic)
On-State Current
8 Amp
Gate Trigger Current
<
5 mA to < 50 mA
Off-State Voltage
MT2
200 V ÷ 600 V
MT1
MT2
G
This series of
TRIACs
uses a high performance
PNPN technology.
These devices are intended for AC control
applications using surface mount technology.
The high commutation performances combined with
high sensitivity, make them perfect in all applications
like solid state relays, home appliances, power tools,
small motor drives...
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Critical rate of rise of on-state current
Operating Temperature Range
Storage Temperature Range
Lead Temperature for soldering
CONDITIONS
All Conduction Angle, T
C
= 110 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10 ms, Half Cycle
20 µs max.
20 µs max.
20 ms max.
I
G
= 2 x I
GT
Tr
≤
100 ns, F = 120 Hz
T
j
= 125 ºC
Min.
8
84
80
36
4
10
1
50
-40
-40
10s max.
+125
+150
260
Max.
Unit
A
A
A
A
2
s
A
W
W
A/µs
ºC
ºC
ºC
I
T(RMS)
I
TSM
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
di/dt
T
j
T
stg
T
L
SYMBOL
PARAMETER
Repetitive Peak Off State
Voltage
B
200
VOLTAGE
D
400
M
600
Unit
V
V
DRM
V
RRM
Jun - 02
FT08...D
SURFACE MOUNT TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
Gate Trigger Current
CONDITIONS
Quadrant
Q1÷Q3
T
j
= 125 ºC
T
j
= 25 ºC
SENSITIVITY
07 08
MAX 5 10
7
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX 10 15
MAX 10 20
MAX 15 30
MIN 20 100
Unit
11 14 16
25 35 50 mA
mA
mA
1
5
µA
0.85
V
60
mΩ
1.55
V
1.3
V
0.2
V
25 35 50 mA
25 50 80 mA
50 60 80
200 400 250 V/µs
I
GT
(1)
V
D
= 12 V
DC
, R
L
= 30Ω
T
j
= 25 ºC
V
R
= V
RRM
,
I
DRM
/I
RRM
Off-State Leakage Current
V
to
(2)
R
d
(2)
V
TM
(2)
V
GT
V
GD
I
H
(2)
I
L
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
T
j
= 125 ºC
T
j
= 125 ºC
I
T
= 11 Amp, tp = 380 µs, T
j
= 25 ºC
V
D
= 12 V
DC
, R
L
= 30Ω, T
j
= 25 ºC Q1÷Q3
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125 ºC Q1÷Q3
I
T
= 100 mA , Gate open, T
j
= 25 ºC
I
G
= 1.2 I
GT
, T
j
= 25 ºC
Q1,Q3
Q2
dv / dt
(2)
Critical Rate of Voltage Rise V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 ºC
(dI/dt)c
(2)
Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs
(dv/dt)c= 10 V/µs
without snubber
T
j
= 125 ºC
T
j
= 125 ºC
Tj = 125 ºC
MIN 3.5 5.4 9 9 9 A/ms
MIN 1.8 2.8 4.5 4.5 4.5
MIN 4.5 4.5 4.5 4.5 4.5
1.6
70
ºC/W
ºC/W
R
th(j-c)
R
th(j-a)
Thermal Resistance
Junction-Case
Thermal Resistance
Junction-Ambient
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
F
FAGOR
SCR
CURRENT
T
08
08
B
D
00
TR
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Jun - 02
FT08...D
SURFACE MOUNT TRIAC
Fig. 1a: Maximum power dissipation versus
RMS on-state current (FT0807.D, FT0808.D).
P (W)
10
α
= 180 º
Fig. 1b: Maximum power dissipation versus
RMS on-state current (FT0811.D, FT0814.D).
P (W)
10
α
= 180 º
8
α
= 120 º
8
α
= 120 º
6
α
= 90 º
6
α
= 90 º
4
α
= 60 º
4
α
= 60 º
2
α
= 30 º
α
180 º
α
α
= 30 º
2
α
180 º
α
0
0
1
2
3
4
5
6
7
8
IT(RMS)(A)
0
0
1
2
3
4
5
6
7
8
IT(RMS)(A)
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and Tcase)
for different thermal resistances heatsink + contact.
P (W)
10
Rth=10 ºC/W
Rth=5 ºC/W
Fig. 3: RMS on-state current versus ambient
temperature
I T(RMS) (A)
9
Rth(j-a) = Rth(j-c)
T case (ºC)
-110
8
7
6
8
Rth=0 ºC/W
6
Rth=15 ºC/W
-115
5
4
-120
3
2
α
= 180 º
Rth(j-a) = 55 ºC/W
S(Cu) = 1.75 cm2
α
= 180 º
4
2
1
-125 Tamb (ºC)
0
0
25
50
75
100
125
Tamb (ºC)
50
75
100
125
0
0
25
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
K = [Zth(j-c) / Rth (j-c)]
1.0
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature
(typical values).
IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)
2.5
2.0
0.5
1.5
IGT
1.0
0.2
0.5
tp (s)
1E-2
1E-1
1E+0
IH
0.1
1E-3
0.0
-40 -20 0 20 40 60 80 100 120 140
Tj (ºC)
Jun - 02
FT08...D
SURFACE MOUNT TRIAC
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
I TSM (A)
80
70
60
50
40
30
20
10
0
1
10
100
1000
Number of cycles
10
1
2
5
10
tp(ms)
I
2
t
Tj initial = 25 ºC
F = 50 Hz
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
ITSM(A). I
2
t (A
2
s)
500
Tj initial = 25 ºC
ITSM
100
Fig. 8: On-state characteristics (maximum
values).
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (ºC/W)
100
ITM(A)
100.0
80
10.0
Tj = Tj max.
Tj max
Vto = 0.8 V
Rd = 60 mΩ
60
Tj = 25 ºC
40
1.0
20
0.1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VTM(V)
0
0
2
4
6
8 10 12 14 16 18 20
S(Cu) (cm
2
)
Jun - 02
FT08...D
SURFACE MOUNT TRIAC
PACKAGE MECHANICAL DATA
DPAK TO 252-AA
REF.
8º
±2º
A
ø1x0.15
E
L3
8º
±2º
D
H
1.6
L4
8º
±2º
L
e
4.57 Typ.
b
L2
A1
1.067
±0.013
8º
±2º
8º
±2º
D1
c2
E1
A
A1
b
c
c1
c2
D
D1
E
E1
e
H
L
L1
L2
L3
L4
Min.
2.18
0
0.64
0.46
0.46
5.97
5.21
6.35
5.20
9.40
1.40
2.55
0.46
0.89
0.64
DIMENSIONS
Milimeters
Nominal
2.3±0.18
0.12
0.75±0.1
0.8±0.013
6.1±0.1
6.58±0.14
5.36±0.1
2.28BSC
9.90±0.15
2.6±0.05
0.5±0.013
1.20±0.05
0.83±0.1
Max.
2.39
0.127
0.89
0.61
0.56
6.22
5.52
6.73
5.46
10.41
1.78
2.74
0.58
1.27
1.02
Marking: type number
Weight: 0.2 g
FOOT PRINT
6.7
6.7
3
3
1.6
2.3
2.3
1.6
Jun - 02
京公网安备 11010802033920号
EEWORLD
