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FC12G

Description
SPECIAL-PURPOSE TRANSISTOR,50V V(BR)CEO,150MA I(C),SOT-25
CategoryDiscrete semiconductor    The transistor   
File Size53KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

FC12G Overview

SPECIAL-PURPOSE TRANSISTOR,50V V(BR)CEO,150MA I(C),SOT-25

FC12G Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.15 A
Minimum DC current gain (hFE)135
Number of components2
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Transistor component materialsSILICON
Ordering number:ENN3482
TR:NPN Epitaxial Plannar Silicon Transistor
FET:N-Channel Junction Silicon Transistor
FC12
High-Frequency Amp, AM Applications,
Low-Frequency Amp
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC12 is formed with two chips, being equivalent
to the 2SC4639, placed in one package.
· Common drain and emitter.
Package Dimensions
unit:mm
2075
[FC12]
1.9
0.95 0.95
4
3
B
E/D
S
1
2
0.4
2.9
0.6
1.6
2.8
Electrical Connection
0.6
5
0.16
0 to 0.1
C:Collector
G:Gate
S:Source
E/D:Emitter/Drain
B:Base
SANYO:CP5
C
G
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
220µF
VBE= --5V
+
470µF
VCC=20V
RB
RL
10IB1= --10IB2=IC=10mA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72301TN(KT)/52098HA (KT)/5132MH, HK No.3482-1/6
0.8
1.1

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FC12G
Description SPECIAL-PURPOSE TRANSISTOR,50V V(BR)CEO,150MA I(C),SOT-25
Maker ON Semiconductor
Reach Compliance Code compliant
Maximum collector current (IC) 0.15 A
Minimum DC current gain (hFE) 135
Number of components 2
Polarity/channel type NPN
Maximum power dissipation(Abs) 0.3 W
surface mount YES
Transistor component materials SILICON
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