BFW43
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
PNP SILICON TRANSISTOR
5.33 (0.210)
4.32 (0.170)
0.48 (0.019)
0.41 (0.016)
dia.
12.7 (0.500)
min.
FEATURES
• PNP High Voltage Planar Transistor
• Hermetic TO18 Package
2.54 (0.100)
Nom.
3
2
1
• Full Screening Options Available
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
stg
T
J
R
θJA
R
θJC
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
B
= 0)
Collector Current
Total Device Dissipation T
A
= 25 °C
Total Device Dissipation T
C
= 25 °C
Storage Temperature
Max Operating Junction Temperature
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
-150V
-150V
-6V
0.1A
0.4W
1.4W
–55 to 200°C
200°C
438°C/W
125°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5989
Issue 1
BFW43
ELECTRICAL CHARACTERISTICS Continued
(T
A
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit.
-150
V
V(
BR)CBO
Collector - Base Breakdown Voltage (1) I
C
= -10µA , I
E
= 0
V(
BR)CEO
Collector - Emitter Breakdown Voltage (1) I
C
=- 2mA , I
B
= 0
V
CB
= -100
V ,
I
E
= 0
I
CBO
Colllector Cut Off Current
V
CB
= -100
V ,
I
E
= 0
I
E
= -10µA , I
C
= 0
T
A
=125 °C
-150
V
-0.2
-0.03
-6
-10
-10
nA
µA
V
V(
BR)EBO
Emitter - Base Breakdown Voltage (1)
V
CE(sat)
Collector - Emitter Saturation Voltage (1) I
C
=-10mA , I
B
=
-
1mA
-0.1
-0.5
V
V
BE(sat)
Base - Emitter Saturation Voltage (1)
I
C
=-10mA , I
B
=
-
1mA
I
C
=-1mA, V
CE
= -10
V
I
C
=-10mA, V
CE
= -10
V
I
C
=-10µA, V
CE
= -10
V
40
40
T
A
= -55 °C
-0.74
85
100
30
50
60
20
-0.9
V
h
FE
DC Current Gain (1)
f
T
Current Gain - Bandwith Product
I
C
=-1mA ,V
CE
=-10
V
, f=20 MH
Z
I
C
=-10mA
V
EB
=-0.5
V ,
I
E
= 0 , f=1 MH
Z
MH
Z
C
EBO
Emitter- Base Capacitance
25
pF
C
CBO
Collector- Base Capacitance
V
CB
=-5
V ,
I
E
= 0 , f=1 MH
Z
5
7
pF
(1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5989
Issue 1
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