Production specification
High Efficiency Rectifier
Features
For surface mounted applications
Ideal for automated placement
Low forward voltage drop
High surge current capability
RoHS Compliant
Case: SMBF molded plastic
Molding compound, UL flammability classification rating 94V-0
Terminals: Solder plated, solderable per MIL- STD-202,Method 208
Polarity: Color band denotes cathode end
US3ABF--US3DBF
Mechanical Data
Maximum Ratings
(@T
A
= 25°C unless otherwise specified)
Characteristic
Peak repetitive reverse voltage
RMS reverse voltage
DC blocking voltage
Maximum average forward output current
Peak forward surge current,
8.3ms single half-sine-wave
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
US3ABF
50
35
50
US3BBF
100
70
100
3.0
100
US3DBF
200
140
200
Units
V
V
V
A
A
Thermal Characteristics
Parameter
Typical thermal resistance
(Note 1)
Operating junction temperature range
Storage temperature range
Symbol
R
R
R
ΘJA
ΘJC
ΘJL
US3ABF
US3BBF
65
16
15
- 55 ---- + 150
- 55 ---- + 150
US3DBF
Units
°C/W
T
J
T
STG
°C
°C
Note:
1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas
SBF306AA
Rev.B
www.gmesemi.com
Production specification
High Efficiency Rectifier
US3ABF--US3DBF
Electrical Characteristics
(@T
A
= 25°C unless otherwise specified)
Parameter
Maximum instantaneous
forward voltage
@T
A
=25°C
Maximum Reverse current
Maximum Reverse Recovery
Time
I
R
Rated V
R
@T
A
=125°C
trr
I
F
=0.5A,I
RM
=1A,I
R(REC)
=0.25A
--
--
500
50
ns
--
10
μA
Symbol
V
F
Test
I
F
=3.0A
conditions
@T
A
=25°C
Typ.
--
Max.
1.0
Units
V
SBF306AA
Rev.B
www.gmesemi.com
Production specification
High Efficiency Rectifier
Fig.1-Forward Current Derating Curve
3
2.5
Average Current (A)
2
1.5
1
0.5
0
0
25
50
75
100
125
150
I
FSM
,Peak Forward Surge Current (A)
US3ABF--US3DBF
Ratings and Characteristic Curves
(T
A
=25°C unless otherwise noted)
Fig.2- Surge Current Derating Curve
100
80
60
40
20
0
1
10
Number of Cycles at 60H
Z
100
Case Temperature( °C)
Fig.3- Typical Forward Voltage Characteristic
10
Fig.4- Typical Reverse Characteristic
Tj=125℃
Forward Current I
F
(A)
Reverse Current ,I
R
(μ A)
Tj=125℃
10
Tj=25℃
1
Tj=75℃
1
Tj=75℃
0.1
=
100
℃
Tj
Tj=25℃
=
100
℃
Tj
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Forward Voltage ,V
F
(V)
0.01
10
20
30
40 50 60 70 80
Reverse Voltage ,V
R
(%)
90 100
SBF306AA
Rev.B
www.gmesemi.com
Embedded System
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