CMLT5088EMBKLEADFREE datasheet, PDF

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CMLT5088EMBKLEADFREE: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size680KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMLT5088EMBKLEADFREE Overview

Transistor

CMLT5088EMBKLEADFREE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	300
JESD-609 code	e3
Humidity sensitivity level	1
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
surface mount	YES
Terminal surface	Matte Tin (Sn)
Nominal transition frequency (fT)	100 MHz

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CMLT5088EM

SURFACE MOUNT

DUAL, MATCHED

NPN SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT5088EM

consists of two individual, isolated 5088E NPN silicon

transistors with matched VBE(ON) characteristics.

This device is designed for applications requiring high

gain and low noise.

MARKING CODE: 88M

FEATURES:

• Transistor pair matched for VBE(ON)

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

UNITS

SOT-563 CASE

• Device is

Halogen Free

by design

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

5.0

100

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

SYMBOL

TEST CONDITIONS

ICBO

VCB=20V

IEBO

VEB=3.0V

BVCBO

IC=100μA

BVCEO

IC=1.0mA

BVEBO

IE=100μA

VCE(SAT)

IC=10mA, IB=1.0mA

VCE(SAT)

IC=100mA, IB=10mA

VBE(SAT)

IC=10mA, IB=1.0mA

hFE

VCE=5.0V, IC=0.1mA

hFE

VCE=5.0V, IC=1.0mA

hFE

VCE=5.0V, IC=10mA

hFE

VCE=5.0V, IC=100mA

VCE=5.0V, IC=500μA, f=20MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

Cib

VBE=0.5V, IC=0, f=1.0MHz

hfe

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=100μA, RS=10kΩ

f=10Hz to 15.7kHz

MATCHING CHARACTERISTICS:

SYMBOL

TEST CONDITIONS

VBE1-VBE2

VCE=5.0V, IC=1.0μA

VBE1-VBE2

VCE=5.0V, IC=5.0μA

VBE1-VBE2

VCE=5.0V, IC=10μA

VBE1-VBE2

VCE=5.0V, IC=100μA

(TA=25°C unless otherwise noted)

MIN

TYP

MAX

135

5.0

8.7

100

110

400

700

800

300

430

900

300

435

300

430

125

100

4.0

350

1400

3.0

MIN

MAX

UNITS

MHz

R1 (20-January 2010)

CMLT5088EMBKLEADFREE Related Products

	CMLT5088EMBKLEADFREE	CMLT5088EMTRLEADFREE	CMLT5088EMTR	CMLT5088EMBK
Description	Transistor	Transistor	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND PICOMINI-6	Transistor
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	compliant	compliant	not_compliant	not_compliant
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	300	300	50	300
JESD-609 code	e3	e3	e0	e0
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W	0.35 W
surface mount	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz

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