10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E1360Q1M x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221.
IBM11D1360Q1M x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E2360Q2M x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221. IBM11D2360Q2M x 36 QC
IBM11D1360Q IBM11D2360Q
IBM11E1360Q IBM11E2360Q
1M/2M x 36 DRAM Module
Features
• 72-Pin Single-In-Line Memory Module
• Performance:
-60
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
Access Time From Address
t
RC
Cycle Time
60ns
15ns
30ns
-70
70ns
20ns
35ns
110ns 130ns
45ns
t
PC
Fast Page Mode Cycle Time 40ns
• High Performance CMOS process
• Single 5V,
±
0.5V Power Supply
• All inputs & outputs are fully TTL & CMOS
compatible
• Low active current dissipation
• Fast Page Mode access cycle
• Refresh Modes: RAS-Only, CBR, and Hidden
Refresh
• 1024 refresh cycles distributed across 16ms
• 10/10 Addressing (Row/Column)
• Optimized for use in byte-write parity
applications
• Gold and tin/lead tab versions available
• DRAMs in TSOP or SOJ packages; Quad CAS
in SOJ only.
Description
The IBM11D2360Q is an 8MB 72-pin 4-byte single
in-line memory module (SIMM). The module is orga-
nized as a 2Mx36 high speed memory array, and is
configured as two 1Mx36 banks - each indepen-
dently selectable via unique RAS inputs. The
assembly is intended for use in 36 and 72 bit appli-
cations where interleave of 9 or 18 bit words is not
required. It is manufactured with four 1Mx16
devices, each in a 400mil TSOP or SOJ package,
and two 1Mx4 ‘Quad CAS’ devices for parity. The
use of ‘Quad CAS’ devices results in reduced SIMM
height and lower power dissipation.
The IBM11D1360Q is a 4MB half populated version,
manufactured with two 1Mx16 devices and one
1Mx4 ‘Quad CAS’ device and available in TSOP
version only.
The IBM 72-Pin SIMMs provide a high performance,
flexible 4-byte interface in a 4.25” long footprint.
Card Outline
1
36 37
72
50H7992
SA14-4335-01
Revised 6/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 21
IBM11D2360Q IBM11D1360Q
IBM11E2360Q IBM11E1360Q
1M/2M x 36 DRAM Module
Pin Description
RAS0, RAS2
RAS0 - RAS3
CAS0 - CAS3
WE
A0 - A9
DQ0-7, 9-16,
18-25, 27-34
Row Address Strobe (4MB)
Row Address Strobe (8MB)
Column Address Strobe
Read/write Input
Address Inputs
Data Input/output
Pinout
Pin#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Name
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
NC
DQ4
DQ22
DQ5
DQ23
DQ6
Pin#
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Name
DQ24
DQ7
DQ25
A7
NC
V
CC
A8
A9
RAS3*
RAS2
PQ26
PQ8
PQ17
PQ35
V
SS
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1*
NC
WE
NC
Pin#
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Name
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
PQ8, 17, 26, 35 Parity Input/output
V
CC
V
SS
NC
PD1 - PD4
Power (+5V)
Ground
No Connect
Presence Detects
1. DQ numbering is compatible with non-parity (x32) version.
2. * RAS1 and RAS3 are “NC” on 4MB SIMM.
Ordering Information
Part Number
IBM11D1360QC-60
IBM11D1360QC-70
IBM11E1360QC-60
IBM11E1360QC-70
IBM11D1360QD-60J
IBM11D1360QD-70J
IBM11D2360QC-60
IBM11D2360QC-70
IBM11E2360QC-60
IBM11E2360QC-70
IBM11D2360QD-60J
IBM11D2360QD-70J
IBM11E2360QD-60J
IBM11E2360QD-70J
2M x 36
1M x 36
Organization
Speed
60ns
70ns
60ns
70ns
60ns
70ns
60ns
70ns
60ns
70ns
60ns
70ns
60ns
70ns
10/10
Addr.
Leads
Sn/Pb
Sn/Pb
Au
Au
Sn/Pb
Sn/Pb
Sn/Pb
Sn/Pb
Au
Au
Sn/Pb
Sn/Pb
Au
Au
4.25” x 1” x .360”
E
SOJ
D
TSOP
4.25” x 1” x .205”
E
SOJ
1
1
D
TSOP
Dimensions
DRAM Die
Revision
1M x 16
Package
Notes
1
1
1
1
1. DRAM package designator appended to speed portion of part number on assemblies beginning with DRAM die rev E.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H7992
SA14-4335-01
Revised 6/96
Page 2 of 21
IBM11D2360Q IBM11D1360Q
IBM11E2360Q IBM11E1360Q
1M/2M x 36 DRAM Module
Truth Table
Function
Standby
Read
Early-Write
Fast Page Mode - Read:
1st Cycle
Subsequent Cycles
Fast Page Mode - Write:
1st Cycle
Subsequent Cycles
RAS-Only Refresh
CAS-Before-RAS Refresh
Hidden Refresh
Read
Write
RAS
H
L
L
L
L
L
L
L
H→L
L→H→L
L→H→L
CAS
H→X
L
L
H→L
H→L
H→L
H→L
H
L
L
L
WE
X
H
L
H
H
L
L
X
H
H
L
Row
Address
X
Row
Row
Row
N/A
Row
N/A
Row
X
Row
Row
Column
Address
X
Col
Col
Col
Col
Col
Col
N/A
X
Col
Col
All DQ, PQ bits
High Impedance
Valid Data Out
Valid Data In
Valid Data Out
Valid Data Out
Valid Data In
Valid Data In
High Impedance
High Impedance
Data Out
Data In
Presence Detect
1M x 36
Pin
PD1
PD2
PD3
PD4
1.
NC= OPEN
,
V
ss =
GND
-60
V
SS
V
SS
NC
NC
-70
V
SS
V
SS
V
SS
NC
-60
NC
NC
NC
NC
2M x 36
-70
NC
NC
V
SS
NC
Absolute Maximum Ratings
Symbol
V
CC
V
IN
V
OUT
T
OPR
T
STG
P
D
I
OUT
Parameter
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
Rating
-1.0 to +6.0
-1.0 to +6.0
-1.0 to +6.0
0 to +70
-55 to +125
2.3 (4MB) 4.6 (8MB)
50
Units
V
V
V
°C
°C
W
mA
Notes
1
1
1
1
1
1, 2
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
2. Maximum power occurs when all banks are active (refresh cycle).
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
50H7992
SA14-4335-01
Revised 6/96
Page 4 of 21
IBM11D1360Q IBM11D2360Q
IBM11E1360Q IBM11E2360Q
1M/2M x 36 DRAM Module
Recommended DC Operating Conditions
Symbol
V
CC
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
Parameter
(T
A
= 0 to 70
°
C)
Min
4.5
2.4
0.0
Typ
5.0
—
—
Max
5.5
V
CC
+ 0.5
0.8
Units
V
V
V
Notes
1
1, 2
1, 2
1. All voltages referenced to V
SS
.
2. V
IH
may overshoot to V
CC
+ 2.0V for pulse widths of
≤
4.0ns (or V
CC
+ 1.0V for
≤
8.0ns). Additionally, V
IL
may undershoot to -2.0V
for pulse widths
≤
4.0ns (or -1.0V for
≤
8.0ns). Pulse widths measured at 50% points with amplitude measured peak to DC refer-
ence.
Capacitance
Symbol
C
I1
C
I2
C
I3
C
I4
C
I5
C
I/O1
C
I/O2
(T
A
= 0 to +70°C, V
CC
= 5.0V
±
0.5V)
Parameter
1M x 36
Max
58
37
30
25
60
16
18
2M x 36
Max
100
44
42
47
94
29
29
Units
pF
pF
pF
pF
pF
pF
pF
Input Capacitance (A0-A9)
Input Capacitance (4MB: RAS0, 8MB: RAS0, 1)
Input Capacitance (4MB: RAS2, 8MB: RAS2, 3)
Input Capacitance (CAS)
Input Capacitance (WE)
Output Capacitance (DQ0 - DQ34)
Output Capacitance (PQ8, 17, 26, 35))
50H7992
SA14-4335-01
Revised 6/96
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 21