IBM11D2360QD-70J datasheet, PDF

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IBM11D2360QD-70J: DescriptionFast Page DRAM Module, 2MX36, 70ns, CMOS, SIMM-72; Categorystorage storage; File Size214KB，21 Pages; ManufacturerIBM; Websitehttp://www.ibm.com

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IBM11D2360QD-70J Overview

Fast Page DRAM Module, 2MX36, 70ns, CMOS, SIMM-72

IBM11D2360QD-70J Parametric

Parameter Name	Attribute value
Maker	IBM
Parts packaging code	SIMM
package instruction	SIMM, SSIM72
Contacts	72
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width	16
I/O type	COMMON
JESD-30 code	R-XSMA-N72
memory density	75497472 bit
Memory IC Type	FAST PAGE DRAM MODULE
memory width	36
Number of functions	1
Number of ports	1
Number of terminals	72
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX36
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	25.4 mm
Maximum standby current	0.006 A
Maximum slew rate	0.356 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE

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10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E1360Q1M x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221.

IBM11D1360Q1M x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E2360Q2M x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221. IBM11D2360Q2M x 36 QC

IBM11D1360Q IBM11D2360Q

IBM11E1360Q IBM11E2360Q

1M/2M x 36 DRAM Module

Features

• 72-Pin Single-In-Line Memory Module

• Performance:

-60

RAC

RAS Access Time

CAC

CAS Access Time

Access Time From Address

Cycle Time

60ns

15ns

30ns

-70

70ns

20ns

35ns

110ns 130ns

45ns

Fast Page Mode Cycle Time 40ns

• High Performance CMOS process

• Single 5V,

0.5V Power Supply

• All inputs & outputs are fully TTL & CMOS

compatible

• Low active current dissipation

• Fast Page Mode access cycle

• Refresh Modes: RAS-Only, CBR, and Hidden

Refresh

• 1024 refresh cycles distributed across 16ms

• 10/10 Addressing (Row/Column)

• Optimized for use in byte-write parity

applications

• Gold and tin/lead tab versions available

• DRAMs in TSOP or SOJ packages; Quad CAS

in SOJ only.

Description

The IBM11D2360Q is an 8MB 72-pin 4-byte single

in-line memory module (SIMM). The module is orga-

nized as a 2Mx36 high speed memory array, and is

configured as two 1Mx36 banks - each indepen-

dently selectable via unique RAS inputs. The

assembly is intended for use in 36 and 72 bit appli-

cations where interleave of 9 or 18 bit words is not

required. It is manufactured with four 1Mx16

devices, each in a 400mil TSOP or SOJ package,

and two 1Mx4 ‘Quad CAS’ devices for parity. The

use of ‘Quad CAS’ devices results in reduced SIMM

height and lower power dissipation.

The IBM11D1360Q is a 4MB half populated version,

manufactured with two 1Mx16 devices and one

1Mx4 ‘Quad CAS’ device and available in TSOP

version only.

The IBM 72-Pin SIMMs provide a high performance,

flexible 4-byte interface in a 4.25” long footprint.

Card Outline

36 37

50H7992

SA14-4335-01

Revised 6/96

Use is further subject to the provisions at the end of this document.

Page 1 of 21

IBM11D2360QD-70J Related Products

	IBM11D2360QD-70J	MBB0207NE9653CR4L0	IBM11D2360QC-60	IBM11D2360QC-70	IBM11D2360QD-60J	IBM11E2360QD-70J	IBM11D1360QD-70J	IBM11E2360QD-60J	IBM11D1360QC-60	IBM11D1360QC-70
Description	Fast Page DRAM Module, 2MX36, 70ns, CMOS, SIMM-72	Fixed Resistor, Metal Film, 0.4W, 965000ohm, 350V, 0.25% +/-Tol, 15ppm/Cel, Through Hole Mount, RADIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT	Fast Page DRAM Module, 2MX36, 60ns, CMOS, PSMA72	Fast Page DRAM Module, 2MX36, 70ns, CMOS, PSMA72	Fast Page DRAM Module, 2MX36, 60ns, CMOS, SIMM-72	Fast Page DRAM Module, 2MX36, 70ns, CMOS, SIMM-72	Fast Page DRAM Module, 1MX36, 70ns, CMOS, SIMM-72	Fast Page DRAM Module, 2MX36, 60ns, CMOS, SIMM-72	Fast Page DRAM Module, 1MX36, 60ns, CMOS, PSMA72	Fast Page DRAM Module, 1MX36, 70ns, CMOS, PSMA72
package instruction	SIMM, SSIM72	Axial,	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72	SIMM, SSIM72
Reach Compliance Code	unknown	compliant	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Number of terminals	72	2	72	72	72	72	72	72	72	72
Maximum operating temperature	70 °C	125 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
Package shape	RECTANGULAR	TUBULAR PACKAGE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	Axial	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	METAL FILM	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Maker	IBM	-	IBM	IBM	IBM	IBM	IBM	IBM	IBM	IBM
ECCN code	EAR99	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	-	-
Maximum access time	70 ns	-	60 ns	70 ns	60 ns	70 ns	70 ns	60 ns	60 ns	70 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	LASER TRIMMABLE, PRECISION, RATED AC VOLTAGE(V): 350	-	-	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	-	-
I/O type	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XSMA-N72	-	R-PSMA-N72	R-PSMA-N72	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72	R-XSMA-N72	R-PSMA-N72	R-PSMA-N72
memory density	75497472 bit	-	75497472 bit	75497472 bit	75497472 bit	75497472 bit	37748736 bit	75497472 bit	37748736 bit	37748736 bit
Memory IC Type	FAST PAGE DRAM MODULE	-	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE
memory width	36	-	36	36	36	36	36	36	36	36
word count	2097152 words	-	2097152 words	2097152 words	2097152 words	2097152 words	1048576 words	2097152 words	1048576 words	1048576 words
character code	2000000	-	2000000	2000000	2000000	2000000	1000000	2000000	1000000	1000000
organize	2MX36	-	2MX36	2MX36	2MX36	2MX36	1MX36	2MX36	1MX36	1MX36
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	-	PLASTIC/EPOXY	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SIMM	-	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM	SIMM
Encapsulate equivalent code	SSIM72	-	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72	SSIM72
power supply	5 V	-	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	1024	-	1024	1024	1024	1024	1024	1024	1024	1024
Maximum seat height	25.4 mm	-	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm
Maximum standby current	0.006 A	-	0.006 A	0.006 A	0.006 A	0.006 A	0.003 A	0.006 A	0.003 A	0.003 A
Maximum slew rate	0.356 mA	-	0.421 mA	0.356 mA	0.421 mA	0.356 mA	0.35 mA	0.421 mA	0.415 mA	0.35 mA
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

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