GS74108TP/J
SOJ, TSOP
Commercial Temp
Industrial Temp
Features
• Fast access time: 8, 10, 12, 15ns
• CMOS low power operation: 150/125/110/90 mA at min. cycle time.
• Single 3.3V ± 0.3V power supply
• All inputs and outputs are TTL compatible
• Fully static operation
• Industrial Temperature Option: -40° to 85°C
• Package line up
J: 400mil, 36 pin SOJ package
TP: 400mil, 44 pin TSOP Type II package
512K x 8
4Mb Asynchronous SRAM
SOJ 512K x 8 Pin Configuration
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
V
DD
V
SS
DQ
3
DQ
4
WE
A
17
A
16
A
15
A
14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
8, 10, 12, 15ns
3.3V V
DD
Center V
DD
& V
SS
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A
5
A
6
A
7
A
8
OE
DQ
8
DQ
7
V
SS
V
DD
DQ
6
DQ
5
A
9
A
10
A
11
A
12
A
18
NC
36 pin
400mil SOJ
Description
The GS74108 is a high speed CMOS static RAM organized as
524,288-words by 8-bits. Static design eliminates the need for exter-
nal clocks or timing strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS74108 is avail-
able in 400 mil SOJ and 400 mil TSOP Type-II packages.
Pin Descriptions
Symbol
A
0
to A
18
DQ
1
to DQ
8
CE
WE
OE
V
DD
V
SS
NC
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3V power supply
Ground
No connect
A
13
Rev: 1.06 7/2000
1/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
TSOP-II 512K x 8 Pin Configuration
NC
NC
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
V
DD
V
SS
DQ
3
DQ
4
WE
A
17
A
16
A
15
A
14
A
13
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
NC
A
5
A
6
A
7
A
8
OE
DQ
8
DQ
7
V
SS
V
DD
DQ
6
DQ
5
A
9
A
10
A
11
A
12
A
18
NC
NC
NC
44 pin
400mil TSOP II
Block Diagram
A
0
Address
Input
Buffer
Row
Decoder
Memory Array
A
18
CE
WE
OE
Column
Decoder
Control
I/O Buffer
DQ
1
DQ
8
Rev: 1.06 7/2000
2/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
Truth Table
CE
H
L
L
L
Note: X: “H” or “L”
OE
X
L
X
H
WE
X
H
L
H
DQ
1
to DQ
8
Not Selected
Read
Write
High Z
V
DD
Current
ISB
1
, ISB
2
I
DD
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
-0.5 to +4.6
-0.5 to V
DD
+0.5
(
≤
4.6V max.)
-0.5 to V
DD
+0.5
(
≤
4.6V max.)
0.7
-55 to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.06 7/2000
3/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
Recommended Operating Conditions
Parameter
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
DD
V
IH
V
IL
T
Ac
T
A
I
Min
3.0
3.135
2.0
-0.3
0
-40
Typ
3.3
3.3
-
-
-
-
Max
3.6
3.6
V
DD
+0.3
0.8
70
85
Unit
V
V
V
V
o
C
C
o
Note:
1. Input overshoot voltage should be less than V
DD
+2V and not exceed 20ns.
2. Input undershoot voltage should be greater than -2V and not exceed 20ns.
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
=0V
V
OUT
=0V
Max
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
=25°C, f=1MHz
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Input Leakage
Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Symbol
I
IL
I
LO
V
OH
V
OL
Test Conditions
V
IN
= 0 to V
DD
Output High Z
V
OUT
= 0 to V
DD
I
OH
= - 4mA
I
LO
= + 4mA
Min
-1uA
-1uA
2.4
Max
1uA
1uA
0.4V
Rev: 1.06 7/2000
4/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
Power Supply Currents
Parameter
Symbol
Test Conditions
CE
≤
V
IL
All other inputs
≥
V
IH
or
≤
V
IL
Min. cycle time
I
OUT
= 0 mA
CE
≥
V
IH
All other inputs
≥
V
IH
or
≤
V
IL
Min. cycle time
CE
≥
V
DD
- 0.2V
All other inputs
≥
V
DD
- 0.2V or
≤
0.2V
0 to 70°C
8ns
10ns
12ns
15ns
10ns
-40 to 85°C
12ns
15ns
Operating
Supply
Current
I
DD
150mA
125mA
110mA
90mA
135mA
120mA
100mA
Standby
Current
I
SB1
70mA
65mA
60mA
55mA
75mA
70mA
65mA
Standby
Current
I
SB2
30mA
40mA
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
V
IH
=2.4V
V
IL
=0.4V
tr=1V/ns
tf=1V/ns
1.4V
1.4V
Fig. 1& 2
Output Load 1
DQ
50
Ω
VT=1.4V
30pF
1
Output Load 2
3.3V
DQ
5pF
1
589
Ω
434
Ω
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
Rev: 1.06 7/2000
5/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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