PBV1632S16DB-N7-T datasheet, PDF

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PBV1632S16DB-N7-T: Description0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR; CategoryWireless rf/communication Radio frequency and microwave; File Size283KB，1 Pages; ManufacturerThin Film Technology Corp (TFT)

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PBV1632S16DB-N7-T Overview

0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR

PBV1632S16DB-N7-T Parametric

Parameter Name	Attribute value
Maker	Thin Film Technology Corp (TFT)
Reach Compliance Code	unknown
Nominal attenuation	16 dB
Characteristic impedance	50 Ω
structure	COMPONENT
Maximum input power (CW)	20 dBm
Maximum operating frequency	3000 MHz
Minimum operating frequency
Maximum operating temperature	100 °C
Minimum operating temperature	-40 °C
RF/Microwave Device Types	FIXED ATTENUATOR
Maximum voltage standing wave ratio	1.3

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Thin Film Variable Attenuators

PBV Series, PXV Series

1.0 Description

This thin film high frequency attenuator offers low power dissipation and attenuation that varies with

temperature. It is used for simplifying temperature compensation circuits or in any application with a

temperature shift requiring a desired amount of attenuation change.

2.0 Mechanical

PXV1220S

dimension mm

PBV1632S

equivalent

3.0 Electrical

Type

Attenuation

Attenuation tolerance

Impedance

VSWR

Temperature coefficient of attenuation

PXV 1220S

(0805)

PBV 1632S

(1206)

1, 2, 3, 4, 5, 6, 7, 8, 9, 10 dB 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 16dB

±0.5 dB (@ 20°C, no load)

50 ohm

under 1.3

N1 0.0119 dB/dB*°C N5 0.0041 dB/dB*°C

N1~N8

N2 0.0086 dB/dB*°C N6 0.0035 dB/dB*°C

ex: 6 dB N3 0.0062 dB/dB*°C N7 0.0026 dB/dB*°C

N4 0.0047 dB/dB*°C N8 0.0019 dB/dB*°C

DC to 3 GHz (6 GHz)

63 mW

100 mW

-40°C to +100°C

Frequency range

Rated power

Operating temperature range

4.0 Part Number

PXV 1220S 6dB - N1 - T

Packaging (T= Tape)

Temperature coefficient of attenuation

Attenuation

Package size

Product designator

Manufacturer(s) of the products described on this page are indicated by their respective logos.

36

PBV1632S16DB-N7-T Related Products

	PBV1632S16DB-N7-T	PBV1632S16DB-N2-T	PBV1632S16DB-N3-T	PBV1632S16DB-N4-T	PBV1632S16DB-N5-T	PBV1632S16DB-N6-T	PBV1632S16DB-N8-T	PBV1632S16DB-N1-T
Description	0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR	0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR	0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR	0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR	0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR	0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR	0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR	0 MHz - 3000 MHz RF/MICROWAVE FIXED ATTENUATOR
Maker	Thin Film Technology Corp (TFT)	Thin Film Technology Corp (TFT)	Thin Film Technology Corp (TFT)	Thin Film Technology Corp (TFT)	Thin Film Technology Corp (TFT)	Thin Film Technology Corp (TFT)	Thin Film Technology Corp (TFT)	Thin Film Technology Corp (TFT)
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Nominal attenuation	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB
Characteristic impedance	50 Ω	50 Ω	50 Ω	50 Ω	50 Ω	50 Ω	50 Ω	50 Ω
structure	COMPONENT	COMPONENT	COMPONENT	COMPONENT	COMPONENT	COMPONENT	COMPONENT	COMPONENT
Maximum input power (CW)	20 dBm	20 dBm	20 dBm	20 dBm	20 dBm	20 dBm	20 dBm	20 dBm
Maximum operating frequency	3000 MHz	3000 MHz	3000 MHz	3000 MHz	3000 MHz	3000 MHz	3000 MHz	3000 MHz
Maximum operating temperature	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C	100 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
RF/Microwave Device Types	FIXED ATTENUATOR	FIXED ATTENUATOR	FIXED ATTENUATOR	FIXED ATTENUATOR	FIXED ATTENUATOR	FIXED ATTENUATOR	FIXED ATTENUATOR	FIXED ATTENUATOR
Maximum voltage standing wave ratio	1.3	1.3	1.3	1.3	1.3	1.3	1.3	1.3

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