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BSX47-16

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size74KB,3 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSX47-16 Overview

Transistor

BSX47-16 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCOMSET
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment6.25 W
Maximum power dissipation(Abs)6.25 W
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Maximum off time (toff)850 ns
Maximum opening time (tons)200 ns
VCEsat-Max0.9 V
BSX45-BSX46-BSX47
NPN MEDIUM POWER TRANSISTORS
C
The BSX45-BSX46-BSX47 are NPN transistors mounted in
TO-39 metal package.
They are intended for use in general industrial applications.
High current and low voltage.
Compliance to RoHS.
B
E
ABSOLUTE MAXIMUM RATINGS
Value
BSX45
40
80
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
BM
P
D
T
J
T
amb
T
Stg
Ratings
Collector-Emitter Voltage I
B
=0
Collector-Base Voltage
I
E
=0
Emitter-Base Voltage
I
C
=0
Collector Current
Collector Peak Current
Base Peak Current
Total Power Dissipation
T
amb
= 25°
Junction Temperature
Operating ambient temperature
Storage Temperature range
BSX46
60
100
7
1
1.5
200
6.25
200
-65 to +150
-65 to +150
BSX47
80
120
Unit
V
V
V
A
A
mA
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
200
28
Unit
°C/W
°C/W
SWITCHING TIMES
Symbol
t
on
t
off
Turn-on time
Turn-off time
Ratings
I
Con
= 100mA; I
Bon
= 5 mA
I
Boff
= -5 mA
Value
200
850
Unit
ns
ns
COMSET SEMICONDUCTORS
1/3

BSX47-16 Related Products

BSX47-16 BSX47-10 BSX46-10 BSX45-10
Description Transistor Transistor Transistor Transistor
Is it Rohs certified? conform to conform to conform to conform to
Maker COMSET COMSET COMSET COMSET
Reach Compliance Code unknown unknown unknown unknown
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 60 V 40 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 25 25 25
JEDEC-95 code TO-39 TO-39 TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 6.25 W 6.25 W 6.25 W 6.25 W
Maximum power dissipation(Abs) 6.25 W 6.25 W 6.25 W 6.25 W
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz 50 MHz
Maximum off time (toff) 850 ns 850 ns 850 ns 850 ns
Maximum opening time (tons) 200 ns 200 ns 200 ns 200 ns
VCEsat-Max 0.9 V 0.9 V 1 V 1 V

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