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SKT600/12D

Description
Silicon Controlled Rectifier, 942A I(T)RMS, 600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size157KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance  
Download Datasheet Parametric Compare View All

SKT600/12D Overview

Silicon Controlled Rectifier, 942A I(T)RMS, 600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB

SKT600/12D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionDISK BUTTON, O-MEDB-N2
Reach Compliance Codecompliant
Shell connectionISOLATED
Nominal circuit commutation break time200 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage500 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current500 mA
JEDEC-95 codeTO-200AB
JESD-30 codeO-MEDB-N2
JESD-609 codee2
Maximum leakage current80 mA
On-state non-repetitive peak current12000 A
Number of components1
Number of terminals2
Maximum on-state current600000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current942 A
Maximum repetitive peak off-state leakage current80000 µA
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

SKT600/12D Preview

V
RSM
V
RRM
V
DRM
dv
I
TRMS
(maximum values for continuous operation)
cr
dt
1400 A
1600 A
I
TAV
(sin. 180; T
case
= . . . ; DSC)
890 A (57
°C)
1020 A (56
°C)
SKT 600/04 D
SKT 600/08 D
SKT 600/12 D
SKT 600/12 E
SKT 600/14 E
SKT 600/16 E
SKT 600/18 E
SKT 760/04 D
SKT 760/08 D
SKT 760/12 D
SKT 760/12 E
SKT 760/14 E
SKT 760/16 E
SKT 760/18 E
Thyristors
SKT 600
SKT 760
V
500
900
1300
1500
1700
1900
V
400
800
1200
1400
1600
1800
V/µs
500
500
500
1000
1000
1000
1000
Symbol Conditions
I
TAV
I
TSM
i
2
t
t
gd
t
gr
(di/dt)
cr
I
H
I
L
t
q
V
T
V
T(TO)
r
T
I
DD
, I
RD
V
GT
I
GT
V
GD
I
GD
R
thjc
sin. 180; (T
case
= ...); DSC
T
vj
= 25
°C:
10 ms
T
vj
= 125
°C:
10 ms
T
vj
= 25
°C:
8,3 ... 10 ms
T
vj
= 125
°C:
8,3 ... 10 ms
T
vj
= 25
°C;
I
G
= 1 A; di
G
/dt = 1 A/µs
V
D
= 0,67 . V
DRM
f = 50 . . . 60 Hz
T
vj
= 25
°C;
typ./max.
T
vj
= 25
°C;
typ./max.
T
vj
= 125
°C;
typ.
T
vj
= 25
°C;
I
T
= 2400 A; max.
T
vj
= 125
°C
T
vj
= 125
°C
T
vj
= 125
°C;
V
DD
= V
DRM
; V
RD
= V
RRM
T
vj
= 25
°C
T
vj
= 25
°C
T
vj
= 125
°C
T
vj
= 125
°C
cont. DSC
sin. 180; DSC/SSC
rec. 120; DSC/SSC
DSC/SSC
SKT 600
600 A
(85
°C)
11 500 A
10 000 A
660 kA
2
s
500 kA
2
s
SKT 760
760 A
(80
°C)
15 000 A
13 000 A
1125 kA
2
s
845 kA
2
s
Features
Hermetic metal cases with
ceramic insulators
Capsule packages for double
sided cooling
Shallow design with single
sided cooling
International standard cases
Off-state and reverse voltages
up to 1800 V
Typical Applications
DC motor control
(e. g. for machine tools)
Controlled rectifiers
(e. g. for battery charging)
AC controllers
(e. g. for temperature control)
typ. 1
µs
typ. 2
µs
125 A/
µs
150 mA/500 mA
500 mA/2 A
100 ... 200
µs
2,0 V
1,0 V
0,4 mΩ
80 mA
1,65 V
0,92 V
0,3 mΩ
80 mA
3V
200 mA
0,25 V
10 mA
0,038
°C/W
0,040/0,082
°C/W
0,045/0,093
°C/W
0,007/0,014
°C/W
– 40 ... +125
°C
– 40 ... +130
°C
10 ... 13 kN
2200 ... 2850 lbs.
240 g
B 10
R
thch
T
vj
T
stg
F
w
Case
SI units
US units
© by SEMIKRON
0895
B 3 – 45
B 3 – 46
© by SEMIKRON
© by SEMIKRON
B 3 – 47
B 3 – 48
© by SEMIKRON

SKT600/12D Related Products

SKT600/12D SKT760/12D
Description Silicon Controlled Rectifier, 942A I(T)RMS, 600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB Silicon Controlled Rectifier, 1193.2A I(T)RMS, 760000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker SEMIKRON SEMIKRON
package instruction DISK BUTTON, O-MEDB-N2 DISK BUTTON, O-MEDB-N2
Reach Compliance Code compliant compliant
Shell connection ISOLATED ISOLATED
Nominal circuit commutation break time 200 µs 200 µs
Configuration SINGLE SINGLE
Critical rise rate of minimum off-state voltage 500 V/us 500 V/us
Maximum DC gate trigger current 200 mA 200 mA
Maximum DC gate trigger voltage 3 V 3 V
Maximum holding current 500 mA 500 mA
JEDEC-95 code TO-200AB TO-200AB
JESD-30 code O-MEDB-N2 O-MEDB-N2
JESD-609 code e2 e2
Maximum leakage current 80 mA 80 mA
On-state non-repetitive peak current 12000 A 15000 A
Number of components 1 1
Number of terminals 2 2
Maximum on-state current 600000 A 760000 A
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum rms on-state current 942 A 1193.2 A
Maximum repetitive peak off-state leakage current 80000 µA 80000 µA
Off-state repetitive peak voltage 1200 V 1200 V
Repeated peak reverse voltage 1200 V 1200 V
surface mount YES YES
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form NO LEAD NO LEAD
Terminal location END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR
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