SKT760/12D datasheet, PDF - EEWORLD Datasheet

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SKT760/12D: DescriptionSilicon Controlled Rectifier, 1193.2A I(T)RMS, 760000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB; CategoryAnalog mixed-signal IC Trigger device; File Size157KB，4 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com; Environmental Compliance

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SKT760/12D Overview

Silicon Controlled Rectifier, 1193.2A I(T)RMS, 760000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB

SKT760/12D Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMIKRON
package instruction	DISK BUTTON, O-MEDB-N2
Reach Compliance Code	compliant
Shell connection	ISOLATED
Nominal circuit commutation break time	200 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	500 mA
JEDEC-95 code	TO-200AB
JESD-30 code	O-MEDB-N2
JESD-609 code	e2
Maximum leakage current	80 mA
On-state non-repetitive peak current	15000 A
Number of components	1
Number of terminals	2
Maximum on-state current	760000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1193.2 A
Maximum repetitive peak off-state leakage current	80000 µA
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	YES
Terminal surface	Tin/Silver (Sn/Ag)
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

SKT760/12D Preview

V

RSM

V

RRM

V

DRM





dv



I

TRMS

(maximum values for continuous operation)



cr

dt

1400 A

1600 A

I

TAV

(sin. 180; T

case

= . . . ; DSC)

890 A (57

°C)

1020 A (56

°C)

SKT 600/04 D

SKT 600/08 D

SKT 600/12 D

SKT 600/12 E

SKT 600/14 E

SKT 600/16 E

SKT 600/18 E

SKT 760/04 D

SKT 760/08 D

SKT 760/12 D

SKT 760/12 E

SKT 760/14 E

SKT 760/16 E

SKT 760/18 E

Thyristors

SKT 600

SKT 760

V

500

900

1300

1500

1700

1900

V

400

800

1200

1400

1600

1800

V/µs

500

1000

Symbol Conditions

I

TAV

I

TSM

i

2

t

gd

t

gr

(di/dt)

cr

I

H

I

L

t

q

V

T

V

T(TO)

r

T

I

DD

, I

RD

V

GT

I

GT

V

GD

I

GD

R

thjc

sin. 180; (T

case

= ...); DSC

T

vj

= 25

°C:

10 ms

T

vj

= 125

°C:

10 ms

T

vj

= 25

°C:

8,3 ... 10 ms

T

vj

= 125

°C:

8,3 ... 10 ms

T

vj

= 25

°C;

I

G

= 1 A; di

G

/dt = 1 A/µs

V

D

= 0,67 . V

DRM

f = 50 . . . 60 Hz

T

vj

= 25

°C;

typ./max.

T

vj

= 25

°C;

typ./max.

T

vj

= 125

°C;

typ.

T

vj

= 25

°C;

I

T

= 2400 A; max.

T

vj

= 125

°C

T

vj

= 125

°C

T

vj

= 125

°C;

V

DD

= V

DRM

; V

RD

= V

RRM

T

vj

= 25

°C

T

vj

= 25

°C

T

vj

= 125

°C

T

vj

= 125

°C

cont. DSC

sin. 180; DSC/SSC

rec. 120; DSC/SSC

DSC/SSC

SKT 600

600 A

(85

°C)

11 500 A

10 000 A

660 kA

2

s

500 kA

2

s

SKT 760

760 A

(80

°C)

15 000 A

13 000 A

1125 kA

2

s

845 kA

2

s

Features

•

Hermetic metal cases with

ceramic insulators

•

Capsule packages for double

sided cooling

•

Shallow design with single

sided cooling

•

International standard cases

•

Off-state and reverse voltages

up to 1800 V

Typical Applications

•

DC motor control

(e. g. for machine tools)

•

Controlled rectifiers

(e. g. for battery charging)

•

AC controllers

(e. g. for temperature control)

typ. 1

µs

typ. 2

µs

125 A/

µs

150 mA/500 mA

500 mA/2 A

100 ... 200

µs

2,0 V

1,0 V

0,4 mΩ

80 mA

1,65 V

0,92 V

0,3 mΩ

80 mA

3V

200 mA

0,25 V

10 mA

0,038

°C/W

0,040/0,082

°C/W

0,045/0,093

°C/W

0,007/0,014

°C/W

– 40 ... +125

°C

– 40 ... +130

°C

10 ... 13 kN

2200 ... 2850 lbs.

240 g

B 10

R

thch

T

vj

T

stg

F

w

Case

SI units

US units

0895

B 3 – 45

B 3 – 46

B 3 – 47

B 3 – 48

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SKT760/12D Related Products

	SKT760/12D	SKT600/12D
Description	Silicon Controlled Rectifier, 1193.2A I(T)RMS, 760000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 942A I(T)RMS, 600000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	SEMIKRON	SEMIKRON
package instruction	DISK BUTTON, O-MEDB-N2	DISK BUTTON, O-MEDB-N2
Reach Compliance Code	compliant	compliant
Shell connection	ISOLATED	ISOLATED
Nominal circuit commutation break time	200 µs	200 µs
Configuration	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us	500 V/us
Maximum DC gate trigger current	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V
Maximum holding current	500 mA	500 mA
JEDEC-95 code	TO-200AB	TO-200AB
JESD-30 code	O-MEDB-N2	O-MEDB-N2
JESD-609 code	e2	e2
Maximum leakage current	80 mA	80 mA
On-state non-repetitive peak current	15000 A	12000 A
Number of components	1	1
Number of terminals	2	2
Maximum on-state current	760000 A	600000 A
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified
Maximum rms on-state current	1193.2 A	942 A
Maximum repetitive peak off-state leakage current	80000 µA	80000 µA
Off-state repetitive peak voltage	1200 V	1200 V
Repeated peak reverse voltage	1200 V	1200 V
surface mount	YES	YES
Terminal surface	Tin/Silver (Sn/Ag)	Tin/Silver (Sn/Ag)
Terminal form	NO LEAD	NO LEAD
Terminal location	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR

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