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BSP170PE6327T

Description
MOSFET P-CH 60V 1.9A SOT223
Categorysemiconductor    Discrete semiconductor   
File Size572KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSP170PE6327T Overview

MOSFET P-CH 60V 1.9A SOT223

BSP170P
SIPMOS
Small-Signal-Transistor
®
Product Summary
V
DS
R
DS(on),max
I
D
-60
0.3
-1.9
V
A
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead
plating;
RoHS compliant
• Qualified according to AEC Q101
PG-SOT223
• Halogen­free according to IEC61249­2­21
Type
BSP170P
Package
PG-SOT223
Tape and reel information
H6327:
1000pcs/reel
Marking
Lead free
Packing
Non Dry
BSP170P Yes
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
steady state
Continuous drain current
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.9 A,
R
GS
=25
-1.9
-1.5
-7.6
70
0.18
I
D
=1.9 A,
V
DS
=48 V,
di /dt =-200 A/µs,
T
j,max
=150 °C
mJ
A
Unit
Avalanche energy, periodic limited by
E
AR
T
jmax
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
dv /dt
V
GS
P
tot
T
j
,
T
stg
JESD22-C101 (HBM)
T
A
=25 °C
-6
±20
1.8
-55 ... 150
1A (250V to 500V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.53
page 1
2012-11-26

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