BSP170P
SIPMOS
Small-Signal-Transistor
®
Product Summary
V
DS
R
DS(on),max
I
D
-60
0.3
-1.9
V
Ω
A
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead
plating;
RoHS compliant
• Qualified according to AEC Q101
PG-SOT223
• Halogenfree according to IEC61249221
Type
BSP170P
Package
PG-SOT223
Tape and reel information
H6327:
1000pcs/reel
Marking
Lead free
Packing
Non Dry
BSP170P Yes
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
steady state
Continuous drain current
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.9 A,
R
GS
=25
Ω
-1.9
-1.5
-7.6
70
0.18
I
D
=1.9 A,
V
DS
=48 V,
di /dt =-200 A/µs,
T
j,max
=150 °C
mJ
A
Unit
Avalanche energy, periodic limited by
E
AR
T
jmax
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
dv /dt
V
GS
P
tot
T
j
,
T
stg
JESD22-C101 (HBM)
T
A
=25 °C
-6
±20
1.8
-55 ... 150
1A (250V to 500V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.53
page 1
2012-11-26
BSP170P
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction -soldering point
SMD version, device on PCB:
R
thJS
Values
typ.
max.
Unit
-
-
20
K/W
R
thJA
minimal footprint
-
-
110
K/W
6 cm
2
cooling area
1)
-
-
70
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
V
GS(th)
V
DS
=V
GS
,
I
D
=-250 µA
V
DS
=-60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
g
fs
V
GS
=-20 V,
V
DS
=0 V
V
GS
=-10 V,
I
D
=-1.9 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-1.9 A
-60
-2.1
-
-3
-
-4
V
Zero gate voltage drain current
I
DSS
-
-0.1
-1
µA
-
-
-
-10
-10
239
-100
-100
300
nA
mΩ
Transconductance
1.3
2.6
-
S
1)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air.
Rev 2.53
page 2
2012-11-26
BSP170P
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
R
=30 V,
I
F
=|I
S
|,
di
F
/dt =100 A/µs
T
A
=25 °C
V
GS
=0 V,
I
F
=-1.9 A,
T
j
=25 °C
-
-
-
-
-
-
-
-0.83
36
41
-1.98
-7.6
-1.1
54
62
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=-48 V,
I
D
=-1.9 A,
V
GS
=0 to -10 V
-
-
-
-
-1.4
-4.9
-10
-4.34
-1.9
-7.4
-14
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-30 V,
V
GS
=-
10 V,
I
D
=-1.9 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=-25 V,
f
=1 MHz
-
-
-
-
-
-
-
328
105
38
14
28
92
60
410
135
48
21
42
138
90
ns
pF
Values
typ.
max.
Unit
Rev 2.53
page 3
2012-11-26
BSP170P
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
); |V
GS
|≥10 V
2.1
1.8
1.8
1.5
1.5
1.2
P
tot
[W]
0.9
-I
D
[A]
1.2
0.9
0.6
0.6
0.3
0.3
0
0
40
80
120
160
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C
1)
;
D
=0
parameter:
t
p
10
1
10 µs
100 µs
limited by on-state
resistance
10 ms
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
2
1 ms
0.5
0.2
10
0
10
100 ms
1
0.1
Z
thJS
[K/W]
-I
D
[A]
0.05
0.02
DC
10
-1
10
0
0.01
single pulse
10
-2
0.1
1
10
100
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
-V
DS
[V]
t
p
[s]
Rev 2.53
page 4
2012-11-26
BSP170P
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
7
-7 V
-20 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
1000
900
-5.5 V
6
-10 V
-6V
800
700
-4 V
5
-I
D
[A]
4
-5 V
R
DS(on)
[mΩ]
600
-4.5 V
500
-5 V
3
400
300
200
-20 V
-6 V
-5.5 V
-7 V
-10 V
2
-4.5 V
1
-4V
100
0
0
1
2
3
4
5
0
0
1
2
3
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
3
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
3.5
3
2.5
2
2
-I
D
[A]
g
fs
[S]
1
125 °C
25 °C
1.5
1
0.5
0
0
1
2
3
4
5
0
0
0.5
1
1.5
2
2.5
-V
GS
[V]
-I
D
[A]
Rev 2.53
page 5
2012-11-26
京公网安备 11010802033920号
EEWORLD
