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2N5153ESY

Description
5A, 80V, PNP, Si, POWER TRANSISTOR, TO-257AA, ROHS COMPLIANT, TO-257, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size631KB,17 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

2N5153ESY Overview

5A, 80V, PNP, Si, POWER TRANSISTOR, TO-257AA, ROHS COMPLIANT, TO-257, 3 PIN

2N5153ESY Parametric

Parameter NameAttribute value
Parts packaging codeTO-257AA
package instructionFLANGE MOUNT, R-XSFM-P3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Factory Lead Time30 weeks
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-257AA
JESD-30 codeR-XSFM-P3
JESD-609 codee4
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceGOLD
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N5153HR
Hi-Rel PNP bipolar transistor 80 V - 5 A
Datasheet
-
production data
Features
3 1
BV
CEO
I
C
(max)
TO-39
2
3
1
80 V
5A
> 70
-65°C to +200°C
2
TO-257
H
FE
at 10 V - 150 mA
Operating temperature range
Hi-Rel PNP bipolar transistor
Linear gain characteristics
ESCC qualified
European preferred part list - EPPL
Radiation level: lot specific total dose contact
marketing for specified level
SMD.5
Figure 1. Internal schematic diagram
Description
The 2N5153HR is a silicon planar epitaxial PNP
transistor in TO-39, TO-257 and SMD.5
packages. It is specifically designed for
aerospace Hi-Rel applications and ESCC
qualified according to the 5204-002 specification.
In case of conflict between this datasheet and
ESCC detailed specification, the latter prevails.
Table 1. Device summary
(1)
Device
Qualification
system
ESCC
ESCC
ESCC
ESCC
ESCC
Agency
specification
5204/002
5204/002
5204/002
5204/002
5204/002
Package
Other features
Emitter on Pin 1 - 100 krad: ESCC
LDR
Emitter on Pin 1
-
100 krad : ESCC LDR
-
EPPL
2N5153RSHRx
2N5153SHR
2N5153HR
(2)
2N5153RESYHRx
2N5153ESYHRB
SMD.5
SMD.5
TO-39
TO-257
TO-257
Yes
Yes
-
-
-
1. Former SW version have been upgraded to ESCC 100 kard Low dose rate version. Contact ST sales office for more
information.
2. Not recommended for new design.
December 2013
This is information on a product in full production.
DocID15386 Rev 4
1/17
www.st.com

2N5153ESY Related Products

2N5153ESY 2N5153SHR 2N5153ESYHRB 2N5153RHR
Description 5A, 80V, PNP, Si, POWER TRANSISTOR, TO-257AA, ROHS COMPLIANT, TO-257, 3 PIN 5A, 80V, PNP, Si, POWER TRANSISTOR, ROHS COMPLIANT, SMD.5, 3 PIN POWER TRANSISTOR SMALL SIGNAL TRANSISTOR
package instruction FLANGE MOUNT, R-XSFM-P3 CHIP CARRIER, R-XBCC-N3 FLANGE MOUNT, R-XSFM-P3 ,
Reach Compliance Code unknow compli unknow unknow
Maximum collector current (IC) 5 A 5 A 5 A -
Collector-emitter maximum voltage 80 V 80 V 80 V -
Configuration SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 40 40 40 -
JESD-30 code R-XSFM-P3 R-XBCC-N3 R-XSFM-P3 -
Number of components 1 1 1 -
Number of terminals 3 3 3 -
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT CHIP CARRIER FLANGE MOUNT -
Polarity/channel type PNP PNP PNP -
surface mount NO YES NO -
Terminal form PIN/PEG NO LEAD PIN/PEG -
Terminal location SINGLE BOTTOM SINGLE -
Transistor component materials SILICON SILICON SILICON -
Base Number Matches 1 1 1 -
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