2N5153HR
Hi-Rel PNP bipolar transistor 80 V - 5 A
Datasheet
-
production data
Features
3 1
BV
CEO
I
C
(max)
TO-39
2
3
1
80 V
5A
> 70
-65°C to +200°C
2
TO-257
H
FE
at 10 V - 150 mA
Operating temperature range
•
Hi-Rel PNP bipolar transistor
•
Linear gain characteristics
•
ESCC qualified
•
European preferred part list - EPPL
•
Radiation level: lot specific total dose contact
marketing for specified level
SMD.5
Figure 1. Internal schematic diagram
Description
The 2N5153HR is a silicon planar epitaxial PNP
transistor in TO-39, TO-257 and SMD.5
packages. It is specifically designed for
aerospace Hi-Rel applications and ESCC
qualified according to the 5204-002 specification.
In case of conflict between this datasheet and
ESCC detailed specification, the latter prevails.
Table 1. Device summary
(1)
Device
Qualification
system
ESCC
ESCC
ESCC
ESCC
ESCC
Agency
specification
5204/002
5204/002
5204/002
5204/002
5204/002
Package
Other features
Emitter on Pin 1 - 100 krad: ESCC
LDR
Emitter on Pin 1
-
100 krad : ESCC LDR
-
EPPL
2N5153RSHRx
2N5153SHR
2N5153HR
(2)
2N5153RESYHRx
2N5153ESYHRB
SMD.5
SMD.5
TO-39
TO-257
TO-257
Yes
Yes
-
-
-
1. Former SW version have been upgraded to ESCC 100 kard Low dose rate version. Contact ST sales office for more
information.
2. Not recommended for new design.
December 2013
This is information on a product in full production.
DocID15386 Rev 4
1/17
www.st.com
Contents
2N5153HR
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.1
6.2
Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
DocID15386 Rev 4
2N5153HR
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Total dissipation at T
amb
≤
25 °C
for TO-39
for TO-257
P
TOT
T
C
≤
25 °C
for TO-39
for TO-257
for SMD.5
Storage temperature
Max. operating junction temperature
Value
-100
-80
-5.5
-5
Unit
V
V
V
A
1
3.3
W
W
10
35
35
-65 to 200
200
W
W
W
°C
°C
TSTG
TJ
Table 3. Thermal data for through-hole packages
Symbol
R
thJC
R
thJA
Parameter
Thermal resistance junction-case
__
Thermal resistance junction-ambient
__
max
max
TO-39
17.5
175
TO-257
5
53
Unit
°C/W
°C/W
Table 4. Thermal data for SMD package
Symbol
R
thJC
Parameter
Thermal resistance junction-case
__
max
SMD.5
5
Unit
°C/W
DocID15386 Rev 4
3/17
17
Electrical characteristics
2N5153HR
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified
Table 5. Electrical characteristics
Symbol
I
CES
Parameter
Collector cut-off
current (I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Collector cut-off
current (I
B
= 0)
(1)
Test conditions
V
CB
= - 60 V
V
CB
= - 60 V
V
EB
= - 4 V
V
EB
= - 5.5 V
V
CE
= - 40 V
Min.
Typ.
Max.
-1
-10
-1
-1
-50
Unit
μA
μA
μA
mA
μA
T
amb
= 150 °C
I
EBO
I
CEO
V
(BR)CEO
Collector-emitter
breakdown voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
I
C
= - 100 mA
-80
V
V
CE(sat) (1)
V
BE(sat) (1)
I
C
= - 5 A
I
C
= - 2.5 A
I
C
= - 5 A
I
C
= - 50 mA
I
C
= - 2.5 A
I
C
= - 5 A
I
C
= - 2.5 A
T
amb
= - 55 °C
V
CE
= - 5 V
f = 20 MHz
I
E
= 0
f = 1 MHz
I
B
= - 0.5 A
I
B
= - 0.25 A
I
B
= - 0.5 A
V
CE
= - 5 V
V
CE
= - 5 V
V
CE
= - 5 V
V
CE
= - 5 V
50
70
40
35
I
C
= - 500 mA
3.5
V
CB
= - 10 V
-1.5
-1.45
-2.2
V
V
V
200
h
FE
(1)
DC current gain
h
fe
AC forward current
transfer ratio
Output capacitance
C
OBO
250
pF
t
on
Turn-on time
V
BB
= - 4 V
V
CC
= - 30 V
V
in
≈
- 51 V
I
C
= 5 A
I
B1
= - I
B2
= - 0.5 A
V
CC
= - 30 V
V
BB
= - 4 V
V
in
≈
- 51 V
I
C
= - 5 A
I
B1
= - I
B2
= - 0.5 A
0.5
μs
t
off
Turn-off time
1.3
μs
1. Pulsed duration = 300
μs,
duty cycle £ 1.5%
4/17
DocID15386 Rev 4
2N5153HR
Electrical characteristics
2.1
1E3
Electrical characteristics (curves)
Figure 2. h
FE
@V
CE
= 5 V
AM12794v1
Figure 3. V
CEsat
@ h
FE
= 10
1
AM12795v1
-55°C
25°C
125°C
100
0.1
-55°C
25°C
125°C
10
0.01
0.1
Ic (A)
1
10
0.01
0.01
0.1
Ic (A)
1
10
Figure 4. V
BEsat
@ h
FE
= 10
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.7
0.75
0.7
0.65
0.6
0.55
0.5
0.01
0.1
Ic (A)
1
10
-55°C
25°C
125°C
AM12796v1
Figure 5. V
BEON
@ V
CE
= 5 V
1.1
1.05
1
0.95
0.9
0.85
[V]
0.8
0.75
AM12797v1
0.65
0.6
0.55
0.5
0.45
0.1
1
Ic (A)
10
-55°C
25°C
125°C
DocID15386 Rev 4
5/17
17
京公网安备 11010802033920号
EEWORLD
