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TIP127

Description
100V,5A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 100V, 5A, 1000, —, 3V
CategoryDiscrete semiconductor   
File Size182KB,4 Pages
ManufacturerGalaxy Microelectronics
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TIP127 Overview

100V,5A,Medium Power PNP Bipolar Transistor, Diodes, PNP, 100V, 5A, 1000, —, 3V

TIP127 Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Maximum collector current (IC)5 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
category
polarityPNP
V(BR)CEO (V) min.100
IC (A)5
hFE min1000
hFE max
Condition1_VCE (V)3
Condition1_IC (mA)500
VCE (sat) (V)4
Condition2_IC (mA)5000
Condition2_IB (mA)20
fT (MHz) min.
PD (W) max.2
AEC QualifiedNo
Maximum operating temperature150
Minimum operating temperature-55
MSL level/
Is it lead-free?Yes
Comply with ReachYes
RoHS compliantYes
ECCN codeEAR99
Package OutlinesTO-220AB
Production specification
Medium Power Linear Switching Applications
FEATURES
Complementary to TIP122.
TIP127
Pb
Lead-free
TO-220AB
MAXIMUM RATING
operating temperature range applies unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j,
T
stg
Junction and Storage Temperature
Base Crrent
Collector Dissipation
T
a
=25℃
T
c
=25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Value
-100
-100
-5
-5
A
-8
-120
2
W
65
-65 to +150
mA
Unit
V
V
V
X022
Rev.A
www.gmesemi.com
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