TSM9926D
20V Dual N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate 1
2. Drain
3. Gate 2
4. Source 2
5. Drain
6. Source 1
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6A =30mΩ
R
DS (on)
, Vgs @ 2.5V, Ids @ 5.2A =40mΩ
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Surface mount
Fast switching
Block Diagram
Ordering Information
Part No.
TSM9926DCX6
Packing
Tape & Reel
Package
SOT-26
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Ta = 25
o
C
Ta = 25
o
C (Peak)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
J
, T
STG
Limit
20
±12
6
30
1.25
2
+150
- 55 to +150
Unit
V
V
A
A
W
W
o
o
C
C
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
R
θja
Limit
100
Unit
o
C/W
TSM9926D
1-3
2003/12 rev. B
Electrical Characteristics (per channel)
Ta = 25
o
C unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State
Resistance
Drain-Source On-State
Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 4.5V, I
D
= 6A
V
GS
= 2.5V, I
D
= 5.2A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= 10V, I
D
= 6A
Symbol
BV
DSS
R
DS(ON)
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
I
S
Min
20
--
--
0.6
--
--
7
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
21
30
--
--
--
13
7.1
1.96
2.94
4.9
2.6
15.7
14
620
124
95
--
--
Max
--
30
Unit
V
mΩ
40
--
1.0
± 100
--
--
--
--
--
--
--
--
--
--
--
1.7
1.2
A
V
pF
nS
nC
V
uA
nA
S
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
I
S
= 1.7A, V
GS
= 0V
V
SD
V
DS
= 10V, I
D
= 6A,
V
GS
= 4.5V
V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM9926D
2-3
2003/12 rev. B
Microcontroller MCU
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