BUL54ASMD-QR-BR4 datasheet, PDF

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BUL54ASMD-QR-BR4: DescriptionPower Bipolar Transistor, 2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BUL54ASMD-QR-BR4 Overview

Power Bipolar Transistor, 2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN

BUL54ASMD-QR-BR4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	500 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
JESD-30 code	R-CBCC-N3
JESD-609 code	e4
Number of components	1
Number of terminals	3
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz

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BUL54ASMD

MECHANICAL DATA

Dimensions in mm

0 .8 9

(0 .0 3 5 )

m in .

3 .7 0 (0 .1 4 6 )

3 .4 1 (0 .1 3 4 )

4 .1 4 (0 .1 6 3 )

3 .8 4 (0 .1 5 1 )

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

3 .6 0 (0 .1 4 2 )

M a x .

1

3

2

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

• FAST SWITCHING (t

f

= 40ns)

• EXCEPTIONAL HIGH TEMPERATURE

PERFORMANCE

• HIGH ENERGY RATING

• EFFICIENT POWER SWITCHING

• MILITARY AND HI–REL OPTIONS

0 .7 6

(0 .0 3 0 )

m in .

1 0 .6 9 (0 .4 2 1 )

1 0 .3 9 (0 .4 0 9 )

1 6 .0 2 (0 .6 3 1 )

1 5 .7 3 (0 .6 1 9 )

9 .6

9 .3

1 1 .5

1 1 .2

7 (0

8 (0

.3 8

.3 6

.4 5

.4 4

1 )

9 )

6 )

4 )

0 .5 0 (0 .0 2 0 )

0 .2 6 (0 .0 1 0 )

FEATURES

• Multi–base design for efficient energy

distribution across the chip resulting in

significantly improved switching and energy

ratings across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

SMD1 Package

Pad 1 – Base

Pad 2 – Collector

Pad 3 – Emitter

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

CBO

V

CEO

V

EBO

I

C

I

C(PK)

I

B

P

tot

T

stg

R

th

Semelab plc.

Collector – Base Voltage

Collector – Emitter Voltage (I

B

= 0)

Emitter – Base Voltage

Collector Current

Peak Collector Current

Base Current

Total Dissipation at T

case

= 25°C

Derate above 25°C when used on efficient heatsink

Operating and Storage Temperature Range

Thermal Resistance Junction – Case

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

1000V

500V

10V

2A

4A

0.8A

35W

0.2W/°C

–65 to 200°C

3.5°C/W

Prelim. 7/00

BUL54ASMD-QR-BR4 Related Products

	BUL54ASMD-QR-BR4	BUL54ASMDR4	BUL54ASMD	BUL54ASMD-QR-B
Description	Power Bipolar Transistor, 2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN	Power Bipolar Transistor, 2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin, CERAMIC, SMD1, 3 PIN
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant	compliant	compliant	compliant
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	500 V	500 V	500 V	500 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	5	5	5	5
JESD-30 code	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz	20 MHz	20 MHz

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