TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | FLANGE MOUNT, R-CDFM-F2 |
| Reach Compliance Code | compliant |
| Shell connection | BASE |
| Maximum collector current (IC) | 12 A |
| Collector-emitter maximum voltage | 25 V |
| Configuration | SINGLE |
| highest frequency band | S BAND |
| JESD-30 code | R-CDFM-F2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 280 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| RN2731B110W | RO2731B10W | RO2731B20W | RO2731B50W | RN3034B80W | RX1214B150W | |
|---|---|---|---|---|---|---|
| Description | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | unknown |
| Shell connection | BASE | BASE | BASE | BASE | BASE | BASE |
| Collector-emitter maximum voltage | 25 V | 25 V | 25 V | 25 V | 25 V | 20 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| highest frequency band | S BAND | S BAND | S BAND | S BAND | S BAND | L BAND |
| JESD-30 code | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES |
| Terminal form | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | NXP | - | - | NXP | NXP | NXP |
| Maximum collector current (IC) | 12 A | 1.4 A | 2.7 A | 6.5 A | 12 A | - |
| Maximum power dissipation(Abs) | 280 W | 35 W | 60 W | 190 W | 280 W | - |
京公网安备 11010802033920号
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