RX1214B150W datasheet, PDF - EEWORLD Datasheet

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RX1214B150W: DescriptionTRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power; CategoryDiscrete semiconductor The transistor; File Size20KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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RX1214B150W Overview

TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power

RX1214B150W Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code	unknown
Shell connection	BASE
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Minimum power gain (Gp)	6.5 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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RX1214B150W Related Products

	RX1214B150W	RO2731B10W	RO2731B20W	RO2731B50W	RN3034B80W	RN2731B110W
Description	TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power	TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power	TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power	TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power	TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power	TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power
Reach Compliance Code	unknown	compliant	compliant	compliant	compliant	compliant
Shell connection	BASE	BASE	BASE	BASE	BASE	BASE
Collector-emitter maximum voltage	20 V	25 V	25 V	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	L BAND	S BAND	S BAND	S BAND	S BAND	S BAND
JESD-30 code	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	NXP	-	-	NXP	NXP	NXP
Maximum collector current (IC)	-	1.4 A	2.7 A	6.5 A	12 A	12 A
Maximum power dissipation(Abs)	-	35 W	60 W	190 W	280 W	280 W

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