TF70908Y datasheet, PDF - EEWORLD Datasheet

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TF70908Y: DescriptionSilicon Controlled Rectifier, 900A I(T)RMS, 900000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size314KB，12 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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TF70908Y Overview

Silicon Controlled Rectifier, 900A I(T)RMS, 900000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element

TF70908Y Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
Nominal circuit commutation break time	25 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	300 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
JESD-30 code	O-CEDB-N2
Maximum leakage current	40 mA
On-state non-repetitive peak current	12000 A
Number of components	1
Number of terminals	2
Maximum on-state current	900000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum rms on-state current	900 A
Off-state repetitive peak voltage	800 V
Repeated peak reverse voltage	800 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Trigger device type	SCR

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TF70908Y Related Products

	TF70908Y	TF70906Y	TF70914Y	TF70910Y	TF70912Y
Description	Silicon Controlled Rectifier, 900A I(T)RMS, 900000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element	Silicon Controlled Rectifier, 900A I(T)RMS, 900000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element	Silicon Controlled Rectifier, 900A I(T)RMS, 900000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element	Silicon Controlled Rectifier, 900A I(T)RMS, 900000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element	Silicon Controlled Rectifier, 900A I(T)RMS, 900000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element
Maker	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
package instruction	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Nominal circuit commutation break time	25 µs	25 µs	25 µs	25 µs	25 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	300 V/us	300 V/us	300 V/us	300 V/us	300 V/us
Maximum DC gate trigger current	200 mA	200 mA	200 mA	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum leakage current	40 mA	40 mA	40 mA	40 mA	40 mA
On-state non-repetitive peak current	12000 A	12000 A	12000 A	12000 A	12000 A
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum on-state current	900000 A	900000 A	900000 A	900000 A	900000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-45 °C	-45 °C	-45 °C	-45 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	900 A	900 A	900 A	900 A	900 A
Off-state repetitive peak voltage	800 V	600 V	1400 V	1000 V	1200 V
Repeated peak reverse voltage	800 V	600 V	1400 V	1000 V	1200 V
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END
Trigger device type	SCR	SCR	SCR	SCR	SCR

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