BS62UV2006SI-85 datasheet, PDF

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BS62UV2006SI-85: DescriptionStandard SRAM, 256KX8, 85ns, CMOS, PDSO32, SOP-32; Categorystorage storage; File Size317KB，9 Pages; ManufacturerBrilliance

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BS62UV2006SI-85 Overview

Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, SOP-32

BS62UV2006SI-85 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Brilliance
package instruction	SOP, SOP32,.56
Reach Compliance Code	unknown
Maximum access time	85 ns
Other features	IT ALSO OPERATES AT 3.0 V NOMINAL SUPPLY VOLTAGE
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	20.447 mm
memory density	2097152 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP32,.56
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	2/3.3 V
Certification status	Not Qualified
Maximum seat height	2.997 mm
Maximum standby current	0.000001 A
Minimum standby current	1 V
Maximum slew rate	0.013 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	1.9 V
Nominal supply voltage (Vsup)	2 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11.303 mm

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BSI

FEATURES

Ultra Low Power/Voltage CMOS SRAM

256K X 8 bit

BS62UV2006

• Wide Vcc operation voltage :

C-grade: 1.8V~3.6V

I-grade: 1.9V~3.6V

(Vcc_min.=1.65V at 25

• Ultra low power consumption :

Vcc = 2.0V C-grade : 8mA (Max.) operating current

I- grade : 10mA (Max.) operating current

0.20uA (Typ.) CMOS standby current

Vcc = 3.0V C-grade : 11mA (Max.) operating current

I- grade : 13mA (Max.) operating current

0.30uA (Typ.) CMOS standby current

• High speed access time :

-85

85ns (Max.)

-10

100ns (Max.)

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.0V

• Easy expansion with CE2, CE1, and OE options

DESCRIPTION

The BS62UV2006 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 262,144 words by 8 bits

and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.2u

at 2.0

/25

and maximum access time of 85ns at 85

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62UV2006 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62UV2006 is available in DICE form, JEDEC standard 32 pin

450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.

PRODUCT FAMILY

PRODUCT

FAMILY

BS62UV2006DC

BS62UV2006TC

BS62UV2006STC

BS62UV2006SC

BS62UV2006DI

BS62UV2006TI

BS62UV2006STI

BS62UV2006SI

OPERATING

TEMPERATURE

Vcc

RANGE

SPEED

( ns )

C-grade:1.8~3.6V

I-grade:1.9~3.6V

( I

CCSB1

, Max )

Vcc=3.0V

POWER DISSIPATION

STANDBY

Operating

( I

, Max )

Vcc=2.0V

Vcc=3.0V

Vcc=2.0V

PKG TYPE

DICE

TSOP-32

STSOP-32

SOP-32

DICE

TSOP-32

STSOP-32

SOP-32

+0 C to +70 C

1.8V ~3.6V

85/100

3.0uA

2.0uA

11mA

8mA

-40

C to +85

1.9V ~ 3.6V

85/100

5.0uA

3.0uA

13mA

10mA

PIN CONFIGURATIONS

BLOCK DIAGRAM

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

A13

A17

A15

A16

A14

A12

•

BS62UV2006TC

BS62UV2006STC

BS62UV2006TI

BS62UV2006STI

A17

A16

A14

A12

DQ0

DQ1

DQ2

GND

BS62UV2006SC

BS62UV2006SI

A11

A13

CE2

A15

VCC

A17

A16

A14

A12

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 2048

2048

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Buffer

Column I/O

Write Driver

Sense Amp

256

Column Decoder

Control

Address Input Buffer

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

Brilliance Semiconductor, Inc

reserves the right to modify document contents without notice.

R0201-BS62UV2006

•

Data

Output

Buffer

CE1

CE2

Vdd

Gnd

A11 A9 A8 A3 A2 A1 A0 A10

Revision 1.1

Jan.

2004

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