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HMC719LP4TR

Description
Wide Band Low Power Amplifier, 2 Func, GAAS,
CategoryWireless rf/communication    Radio frequency and microwave   
File Size715KB,10 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Download Datasheet Parametric Compare View All

HMC719LP4TR Overview

Wide Band Low Power Amplifier, 2 Func, GAAS,

HMC719LP4TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHittite Microwave(ADI)
package instructionLCC24,.16SQ,20
Reach Compliance Codeunknown
Installation featuresSURFACE MOUNT
Number of functions2
Number of terminals24
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeLCC24,.16SQ,20
power supply3/5 V
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum slew rate315 mA
surface mountYES
technologyGAAS
HMC719LP4 / 719LP4E
v04.0610
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
Features
Noise figure: 1.0 dB
Gain: 34 dB
output ip3: +39 dBm
single supply: +3V to +5V
50 ohm matched input/output
24 lead 4x4 mm smT package: 16 mm
2
7
Amplifiers - low Noise - smT
Typical Applications
The HmC719lp4(e) is ideal for:
• Cellular/3G and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• Access points
• Test equipment & military
Functional Diagram
General Description
The HmC719lp4(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G basestation front-end receivers
operating between 1.3 and 2.9 GHz. The amplifier
has been optimized to provide 1.0 dB noise figure,
34 dB gain and +39 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC719lp4(e) shares the same package and pinout
with the HmC718lp3(e) 600 - 1400 mHz lNA. The
HmC719lp4(e) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application.
Electrical Specifications,
T
A
= +25°C, Rbias = 1.5k Ohms*
parameter
frequency range
Gain
Gain Variation over Temperature
Noise figure
input return loss
output return loss
output power for 1 dB
Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
Total supply Current (idd)
12.5
27
Vdd = +3V
min.
Typ.
1.3 - 2.2
32
0.02
1.0
16
10.5
15.5
18
32
187
220
12.5
1.3
22
max.
min.
Typ.
2.2 - 2.9
26.5
0.02
1.3
13.5
9.5
15.5
18.5
31
187
220
18
1.6
29
max.
min.
Typ.
1.3 - 2.2
35
0.02
0.95
17.5
13.5
21.5
23
39
272
315
18
1.2
24
Vdd = +5V
max.
min.
Typ.
2.2 - 2.9
28
0.02
1.25
16.5
11.5
21.5
23
39
272
315
1.6
max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
* rbias resistor sets current, see application circuit herein, Vdd = Vdd1 = Vdd2
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC719LP4TR Related Products

HMC719LP4TR HMC719LP4ETR
Description Wide Band Low Power Amplifier, 2 Func, GAAS, Wide Band Low Power Amplifier, 1300MHz Min, 2900MHz Max, 2 Func, GAAS, 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, 24 PIN
Is it Rohs certified? incompatible conform to
Maker Hittite Microwave(ADI) Hittite Microwave(ADI)
package instruction LCC24,.16SQ,20 LCC24,.16SQ,20
Reach Compliance Code unknown compliant
Installation features SURFACE MOUNT SURFACE MOUNT
Number of functions 2 2
Number of terminals 24 24
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code LCC24,.16SQ,20 LCC24,.16SQ,20
power supply 3/5 V 3/5 V
RF/Microwave Device Types WIDE BAND LOW POWER WIDE BAND LOW POWER
Maximum slew rate 315 mA 315 mA
surface mount YES YES
technology GAAS GAAS
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