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IXGR48N60B3

Description
48 A, 600 V, N-CHANNEL IGBT, TO-247AD
Categorysemiconductor    Discrete semiconductor   
File Size281KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Download Datasheet Parametric View All

IXGR48N60B3 Overview

48 A, 600 V, N-CHANNEL IGBT, TO-247AD

IXGR48N60B3 Parametric

Parameter NameAttribute value
Number of terminals3
Rated off time925 ns
Maximum collector current48 A
Maximum Collector-Emitter Voltage600 V
Processing package descriptionTO-247, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin silver copper
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsPOWER control
Transistor component materialssilicon
Channel typeN channel
Transistor typeINSULATED GATE BIPOLAR
Rated on time54 ns
GenX3
TM
6
00V
IGBTs
Ultra Low Vsat PT IGBT for
up to 5kHz Switching
IXGA36N60A3
IXGP36N60A3
IXGH36N60A3
V
CES
= 600V
I
C110
= 36A
V
CE(sat)
1.4V
TO-263 AA (IXGA)
G
E
C (Tab)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1M
Continuous
Transient
T
C
= 110°C
T
C
=
25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 5
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
600
600
± 20
± 30
36
200
I
CM
= 60
V
CE
V
CES
220
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
°C
°C
N/lb
Nm/lb.in
g
g
g
V
V
V
V
A
A
A
TO-220AB (IXGP)
G
CE
C (Tab)
TO-247 (IXGH)
G
C
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220 & TO-247)
1.13 / 10
TO-263
TO-220
TO-247
2.5
3.0
6.0
Features
Optimized for Low Conduction Losses
International Standard Packages
Advantages
Symbol Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250A, V
GE
= 0V
I
C
= 250A, V
CE
= V
GE
V
CE
= V
CES
, V
GE
= 0V
T
J
= 125°C
V
CE
= 0V, V
GE
= ± 20V
I
C
= 30A, V
GE
= 15V, Note 1
Characteristic Values
Min.
600
3.0
5.5
Typ.
Max.
V
V
High Power Density
Low Gate Drive Requirement
Applications
25
A
250
A
±100 nA
1.4
V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
© 2013 IXYS CORPORATION, All Rights Reserved
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