STTH806
Turbo 2 ultrafast - high voltage rectifier
Main product characteristics
K
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr
(max)
8A
600 V
175° C
1.1 V
35 ns
A
K
A
NC
D
2
PAK
STTH806G
Features and benefits
■
■
■
■
■
A
K
TO-220AC
STTH806D
A
K
TO-220AC Ins
STTH806DIRG
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces conduction and switching losses
Insulated package TO-220AC Ins
– Insulated voltage: 2500 V
RMS
– Typical package capacitance: 7 pF
Order codes
Part Number
STTH806G
Marking
STTH806G
STTH806G
STTH806D
STTH806DI
Description
The STTH806 uses ST Turbo2 600 V technology.
This device is specially suited for use in switching
power supplies, and industrial applications.
Table 1.
Symbol
V
RRM
I
F(RMS)
Repetitive peak reverse voltage
STTH806G-TR
STTH806D
STTH806DIRG
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Parameter
Value
600
TO-220AC, D
2
PAK
RMS forward current
TO-220 Ins
Average forward current,
δ
= 0.5
T
c
= 140° C
T
c
= 120° C
TO-220AC, D
2
PAK
TO-220 Ins
24
8
8
90
-65 to + 175
175
A
A
A
A
°C
°C
30
Unit
V
A
I
F(AV)
I
FSM
T
stg
T
j
1.
Surge non repetitive forward current t
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
(1)
condition to avoid thermal runaway for a diode on its own heatsink
dP
1
tot
-
-------------- < -------------------------
-
R
dT
th
(
j
–
a
)
j
August 2006
Rev 2
www.st.com
1/9
Characteristics
STTH806
1
Table 2.
Characteristics
Thermal parameters
Parameter
Junction to case
TO-220AC, D
2
PAK
TO-220AC Ins
Value
2.5
4
Unit
° C/W
Symbol
R
th(j-c)
Table 3.
Symbol
I
R(1)
V
F(2)
Static electrical characteristics
Parameter
Reverse leakage current
Forward voltage drop
Test conditions
T
j
= 25° C
T
j
= 150° C
T
j
= 25° C
T
j
= 150° C
V
R
= V
RRM
I
F
= 8 A
Min.
Typ
Max.
8
20
1.10
200
1.85
1.40
Unit
µA
V
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 1.07 x I
F(AV)
+ 0.041 I
F2(RMS)
Table 4.
Symbol
Dynamic characteristics
Parameter
Test conditions
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A,
T
j
= 25° C
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
I
F
= 8 A, dI
F
/dt = -100 A/µs,
V
R
= 400 V, T
j
= 25° C
dI
F
/dt = 100 A/µs
I
F
= 8 A
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
dI
F
/dt = 100 A/µs
I
F
= 8 A
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
3.5
40
4.5
Min.
Typ
Max.
35
ns
55
6.5
200
ns
V
Unit
t
rr
Reverse recovery time
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
2/9
STTH806
Characteristics
Figure 1.
Conduction losses versus
average current
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Figure 2.
I
FM
(A)
Forward voltage drop versus
forward current
15.0
P
F(AV)
(W)
100
90
80
12.5
δ
=1
10.0
70
60
T
j
=150°C
(maximum values)
7.5
50
40
T
j
=150°C
(typical values)
5.0
T
2.5
30
20
T
j
=25°C
(maximum values)
I
F(AV)
(A)
0.0
0
1
2
3
4
5
6
7
δ
=tp/T
8
9
tp
10
10
0
0.0
0.5
1.0
1.5
2.0
V
FM
(V)
2.5
3.0
3.5
4.0
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
14
12
10
8
6
4
2
Peak reverse recovery current
versus dI
F
/dt (typical values)
1.0
0.9
0.8
Z
th(j-c)
/R
th(j-c)
Single pulse
I
RM
(A)
V
R
=400V
T
j
=125°C
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
I
F
=0.25 x I
F(AV)
I
F
=2 x I
F(AV)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
t
p
(s)
0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 5.
t
rr
(ns)
Reverse recovery time versus
dI
F
/dt (typical values)
V
R
=400V
T
j
=125°C
Figure 6.
Q
rr
(nC)
V
R
=400V
T
j
=125°C
Reverse recovery charges versus
dI
F
/dt (typical values)
300
450
400
350
I
F
=2 x I
F(AV)
I
F
=2 x I
F(AV)
250
I
F
=I
F(AV)
200
I
F
=I
F(AV)
300
I
F
=0.5 x I
F(AV)
150
250
200
I
F
=0.5 x I
F(AV)
100
150
50
100
0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
dI
F
/dt(A/µs)
0
50
100
150
200
250
300
350
400
450
500
50
3/9
Characteristics
STTH806
Figure 7.
Softness factor versus
dI
F
/dt (typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
S factor
I
F
≤
2 x I
F(AV)
V
R
= 400 V
T
j
= 125° C
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
I
RM
Q
RR
S factor
I
F
=I
F(AV)
V
R
=400V
Reference: T
j
=125°C
dI
F
/dt(A/µs)
0
50
100
150
200
250
300
350
400
450
500
T
j
(°C)
25
50
75
100
125
0.00
Figure 9.
V
FP
(V)
I
F
=I
F(AV)
T
j
=125°C
Transient peak forward voltage
versus dI
F
/dt (typical values)
Figure 10. Forward recovery time versus
dI
F
/dt (typical values)
200
180
160
14
12
10
8
6
4
2
t
fr
(ns)
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
140
120
100
80
60
40
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
20
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, e
CU
= 35 µm)
80
70
60
50
100
R
th(j-a)
(°C/W)
D²PAK
10
40
30
20
V
R
(V)
1
1
10
100
1000
10
S
(Cu)
(cm²)
0
0
5
10
15
20
25
30
35
40
4/9
STTH806
Package mechanical data
2
Package mechanical data
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.80 Nm
Maximum torque value: 1.0 Nm
Table 5.
D
2
PAK Dimensions
Dimensions
Ref.
Millimeters
Min.
A
E
L2
Inches
Min.
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
Max.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
Max
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
3.20
A
C2
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.40
2.40
A1
A2
D
B
B2
L
L3
A1
C
C2
B2
B
G
C
R
D
E
G
A2
L
L2
M
*
V2
L3
M
* FLAT ZONE NO LESS THAN 2mm
R
V2
0.40 typ.
0°
8°
0.016 typ.
0°
8°
Figure 13. D
2
PAK Footprint dimensions (in mm)
16.90
10.30
1.30
5.08
8.90
3.70
5/9
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