VN2010L/BS107
Vishay Siliconix
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN2010L
BS107
200
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
10 @ V
GS
= 4.5 V
28 @ V
GS
= 2.8 V
V
GS(th)
(V)
0.8 to 1.8
0.8 to 3
I
D
(A)
0.19
0.12
D
D
D
D
D
Low On-Resistance: 6
W
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-226AA
(TO-92)
S
1
Device Marking
Front View
“S” VN
2010L
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
TO-92-18RM
(TO-18 Lead Form)
D
1
Device Marking
Front View
“S” BS
107
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
G
2
G
2
D
3
S
3
Top View
VN2010L
Top View
BS107
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
VN2010L
200
"30
0.19
0.12
0.8
0.8
0.32
156
–55 to 150
BS107
200
"25
0.12
Unit
V
A
0.5
W
250
_C/W
_C
11-1
VN2010L/BS107
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VN2010L
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Drain Leakage Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSV
V
GS
= 0 V, I
D
= 100
mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 0 V, V
GS
=
"15
V
V
DS
= 70 V, V
GS
= 0.2 V
V
DS
= 130 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V
T
J
= 125_C
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
V
GS
= 2.8 V, I
D
= 0.02 A
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.05 A
T
J
= 125_C
Forward Transconductance
b
Common Source
Output Conductance
b
g
fs
g
os
V
DS
= 15 V, I
D
= 0.1 A
V
DS
= 15 V, I
D
= 0.05 A
0.7
6
6
11
180
0.15
125
mS
10
20
0.1
28
W
1
100
A
220
1.2
200
0.8
1.8
"10
"10
1
0.03
mA
m
nA
200
0.8
3
V
BS107
Min
Max
Unit
Symbol
Test Conditions
Typ
a
Min
Max
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
=25 V, V
GS
= 0 V, f = 1 MHz
35
9
1
60
30
15
pF
Switching
c
Turn-On Time
Turn-Off Time
t
ON
t
OFF
V
DD
= 25 V, R
L
= 250
W
I
D
^
0.1 A, V
GEN
= 10 V
R
G
= 25
W
5
21
20
ns
30
VNDQ20
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
0.5
V
GS
= 10 V
50
5V
4V
6V
0.3
3V
0.2
I
D
– Drain Current (mA)
40
V
GS
= 2.2 V
2.0 V
Output Characteristics for Low Gate Drive
0.4
I
D
– Drain Current (A)
30
1.8 V
20
1.6 V
1.4 V
0.1
2V
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
10
1.2 V
1.0 V
0.6 V
0
0
0.4
0.8
1.2
1.6
2.0
V
DS
– Drain-to-Source Voltage (V)
Transfer Characteristics
500
V
DS
= 15 V
400
I
D
– Drain Current (mA)
125_C
300
T
J
= –55_C
25_C
24
r
DS(on)
– On-Resistance (
Ω )
20
28
On-Resistance vs. Gate-to-Source Voltage
I
D
= 500 mA
16
12
8
4
50 mA
250 mA
200
100
0
0
1
2
3
4
5
V
GS
– Gate-Source Voltage (V)
0
0
4
8
12
16
20
V
GS
– Gate-Source Voltage (V)
On-Resistance vs. Drain Current
12.5
r
DS(on)
– Drain-Source On-Resistance (
Ω )
r
DS(on)
– Drain-Source On-Resistance (
Ω )
(Normalized)
2.25
2.00
1.75
Normalized On-Resistance
vs. Junction Temperature
V
GS
= 4.5 V
10.0
V
GS
= 10 V
7.5
I
D
= 50 mA
10 mA
1.50
1.25
1.00
0.75
0.50
5.0
2.5
0
0
0.2
0.4
0.6
0.8
1.0
–50
–10
30
70
110
150
I
D
– Drain Current (A)
T
J
– Junction Temperature (_C)
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-3
VN2010L/BS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
V
DS
= 5 V
50
T
J
= 150_C
I
D
– Drain Current (mA)
C – Capacitance (pF)
1
40
C
iss
60
V
GS
= 0 V
f = 1 MHz
Capacitance
30
C
oss
20
25_C
0.1
10
–55_C
0.01
0
0.4
0.8
1.2
1.6
2.0
0
0
C
rss
10
20
30
40
50
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
15.0
100
50
Load Condition Effects on Switching
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
V
GS
– Gate-to-Source Voltage (V)
12.5
I
D
= 0.1 A
10.0
V
DS
= 100 V
20
160 V
10
5
t
d(off)
t
r
7.5
5.0
2.5
2
1
0
250
500
750
1000
1250
0.01
0.1
I
D
– Drain Current (A)
t
d(on)
t
f
0
Q
g
– Total Gate Charge (pC)
1.0
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
P
DM
0.01
Single Pulse
0.01
0.1
1
10
100
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
www.vishay.com
11-4
Document Number: 70215
S-04279—Rev. C, 16-Jul-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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