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BSS84ESL

Description
, Diodes, Single, P, Y, 0.15W, 50W, ±20V
CategoryDiscrete semiconductor   
File Size311KB,5 Pages
ManufacturerGalaxy Microelectronics
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BSS84ESL Overview

, Diodes, Single, P, Y, 0.15W, 50W, ±20V

BSS84ESL Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
package instruction,
Reach Compliance Codeunknown
category
ConfigurationSingle
Channel PolarityP
ESDY
Max PD(W)0.15
Min PD(W)50
Max VGS (V)±20
Max ID(A)0.13
Max IGSS(uA)±10
Max VGS(th) (V)3
RDS(on)(mΩ) @ 25℃ 10V Typ3500
RDS(on)(mΩ) @ 25℃ 10V Max6000
AEC QualifiedNO
Maximum operating temperature150
Minimum operating temperature-55
MSL level3
Is it lead-free?Yes
Comply with ReachYes
RoHS compliantYes
ECCN codeEAR99
Package OutlinesDFN1006-3
P-Channel Enhancement MOSFET Transistor
BSS84ES
Features
Low on-resistance.
High-speed switching.
Drive circuits can be simple.
Parallel use is easy.
ESD Protected Gate Up to 1KV HBM.
BSS84ES
SOT-23
BSS84ESW
SOT-323
Pb
Lead-free
Typical Applications
P-channel enhancement mode effect transistor.
Switching application.
Mechanical Data
Case: SOT-23, SOT-323, DFN1006-3.
Molding Compound, UL Flammability Classification Rating
94V-0.
Terminals: Matte Tin Plated Leads, Solderable Per MIL-
STD-202, Method 208.
BSS84ESL
DFN1006-3
Ordering Information
Part Number
BSS84ES□
BSS84ESW□
BSS84ESL□
□:
none is for Lead Free package;
“G” is for Halogen Free package.
Package
SOT-23
SOT-323
DFN1006-3
Shipping
3000/Tape&Reel
3000/Tape&Reel
10000/Tape&Ree
Marking Code
ES
ES
ES
Maximum Ratings
(@T
A
=25℃ unless otherwise specified)
Parameter
Drain-Source Voltage
Gate -Source Voltage
Continuous Drain Current
Pulsed Drain Current
(NOTE4)
SOT-23
Power Dissipation
(NOTE1)
SOT-323
DFN1006-3
P
D
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-50
±20
-130
-520
0.36
0.20
0.45
W
Units
V
V
mA
mA
Thermal Characteristics
Parameter
SOT-23
Thermal Resistance Junction to Ambient Air
SOT-323
DFN1006-3
Operating Junction Temperature Range
Storage Temperature Range
T
J
T
STG
R
θJA
Symbol
Limits
350
625
279
150
-55 to +150
℃/W
Unit
MTM0045A
www.gmesemi.com
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BSS84ESL Related Products

BSS84ESL BSS84ES BSS84ESW
Description , Diodes, Single, P, Y, 0.15W, 50W, ±20V , Diodes, Single, P, Y, 0.36W, 50W, ±20V , Diodes, Single, P, Y, 0.2W, 50W, ±20V
Maker Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown unknown
Configuration Single Single Single
Channel Polarity P P P
ESD Y Y Y
Max PD(W) 0.15 0.36 0.2
Min PD(W) 50 50 50
Max VGS (V) ±20 ±20 ±20
Max ID(A) 0.13 0.13 0.13
Max IGSS(uA) ±10 ±10 ±10
Max VGS(th) (V) 3 3 3
RDS(on)(mΩ) @ 25℃ 10V Typ 3500 3500 3500
RDS(on)(mΩ) @ 25℃ 10V Max 6000 6000 6000
AEC Qualified NO NO NO
Maximum operating temperature 150 150 150
Minimum operating temperature -55 -55 -55
MSL level 3 3 3
Is it lead-free? Yes Yes Yes
Comply with Reach Yes Yes Yes
RoHS compliant Yes Yes Yes
ECCN code EAR99 EAR99 EAR99
Package Outlines DFN1006-3 SOT-23 SOT-323
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