MG600Q1US65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US65H
High Power & High Speed Switching
Applications
Unit: mm
·
·
·
High input impedance
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
E
C
E
G (B)
JEDEC
JEITA
TOSHIBA
Weight: 465 g (typ.)
―
―
2-109F1A
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
V
Isol
Terminal
Mounting
¾
¾
Rating
1200
±20
600
1200
600
1200
5400
150
-40
to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
Forward current
Collector power dissipation
(Tc
=
25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
A
W
°C
°C
V
N▪m
1
2003-03-11
MG600Q1US65H
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Switching time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
Turn-on
Switching loss
Turn-off
E
off
Symbol
I
GES
I
CES
V
GE (off)
V
CE (sat)
C
ies
t
d (on)
t
r
t
on
t
d (off)
t
f
t
off
V
F
t
rr
R
th (j-c)
E
on
I
F
=
600 A, V
GE
=
0
I
F
=
600 A, V
GE
= -10
V
Transistor stage
Diode stage
Inductive load
V
CC
=
600 V, I
C
=
600 A
V
GE
= ±15
V, R
G
=
2
W
Tc
=
125°C
Inductive load
V
CC
=
600 V, I
C
=
600 A
V
GE
= ±15
V, R
G
=
2
W
Test Condition
V
GE
= ±20
V, V
CE
=
0
V
CE
=
1200 V, V
GE
=
0
I
C
=
600 mA, V
CE
=
5 V
I
C
=
600 A,
V
GE
=
15 V
Tc
=
25°C
Tc
=
125°C
Min
¾
¾
4.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
¾
¾
¾
3.0
3.6
51200
0.12
0.18
0.30
0.80
0.10
0.90
2.4
0.25
¾
¾
60
60
Max
±500
4.0
7.0
4.0
¾
¾
¾
¾
¾
¾
0.15
¾
3.0
¾
0.023
0.05
¾
mJ
¾
V
ms
°C/W
ms
Unit
nA
mA
V
V
pF
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
Note: Switching time measurement circuit and input/output waveforms
R
G
-V
GE
I
C
R
G
I
F
V
GE
0
90%
10%
t
rr
L
V
CC
I
C
V
CE
0
10%
t
d (off)
t
off
t
f
10%
t
d (on)
t
on
t
r
90%
90%
2
2003-03-11
MG600Q1US65H
I
C
– V
CE
1200
20 V
18 V
12 V
15 V
1200
I
C
– V
CE
20 V
12 V
18 V
10 V
15 V
(A)
900
(A)
Collector current
I
C
10 V
900
Collector current
I
C
600
PC
=
5400 W
600
VGE
=
8 V
300
300
VGE
=
8 V
Common emitter
Tc
=
25°C
2
4
6
8
10
0
0
0
0
Common emitter
Tc
=
125°C
2
4
6
8
10
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
V
CE
– V
GE
16
Common emitter
Tc
=
25°C
16
V
CE
– V
GE
Common emitter
Tc
=
125°C
(V)
V
CE
12
V
CE
Collector-emitter voltage
(V)
12
Collector-emitter voltage
8
8
IC
=
1200 A
4
600 A
IC
=
1200 A
4
600 A
300 A
0
0
4
8
12
16
20
300 A
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
Gate-emitter voltage V
GE
(V)
I
C
– V
GE
1200
Common emitter
VCE
=
5 V
1200
Common cathode
VGE
=
0
I
F
– V
F
1000
(A)
900
(A)
Tc
=
125°C
I
C
Collector current
600
Forward current I
F
800
600
Tc
=
125°C
400
25°C
25°C
300
-40°C
200
0
0
4
8
12
16
0
0
1
2
3
4
Gate-emitter voltage V
GE
(V)
Forward voltage
V
F
(V)
3
2003-03-11
MG600Q1US65H
Switching time – I
C
1
Common emitter
VCC
=
600 V
VGE
= ±15
V
Rg
=
2.0
W
10
Switching time – I
C
(ms)
(ms)
ton
toff
1
td (off)
Switching time
0.1
td (on)
Switching time
0.1
tf
Common emitter
VCC
=
600 V
VGE
= ±15
V
Rg
=
2.0
W
100
1000
tr
: Tc
=
25°C
: Tc
=
125°C
100
1000
: Tc
=
25°C
0.01
10
: Tc
=
125°C
0.01
10
Collector current
I
C
(A)
Collector current
I
C
(A)
Switching time – R
G
1
ton
10
Switching time – R
G
: Tc
=
25°C
: Tc
=
125°C
(ms)
(ms)
tr
toff
Switching time
0.1
td (on)
Switching time
1
td (off)
Common emitter
VCC
=
600 V
IC
=
600 A
VGE
= ±15
V
tf
0.01
1
: Tc
=
25°C
: Tc
=
125°C
10
Common emitter
VCC
=
600 V
IC
=
600 A
VGE
= ±15
V
100
0.1
1
10
100
Gate resistance R
G
(9)
Gate resistance R
G
(9)
Switching loss – I
C
100
: Tc
=
25°C
: Tc
=
125°C
1000
Eon
Switching loss – R
G
Eon
(mJ)
(mJ)
Eoff
100
Switching loss
10
Eoff
Edsw
Switching loss
Edsw
10
Common emitter
VCC
=
600 V
IC
=
600 A
VGE
= ±15
V
10
100
1
10
Common emitter
VCC
=
600 V
VGE
= ±15
V
RG
=
2.0
W
100
1000
: Tc
=
25°C
1
1
: Tc
=
125°C
Collector current
I
C
(A)
Gate resistance R
G
(9)
4
2003-03-11
MG600Q1US65H
V
CE
, V
GE
– Q
G
1600
Common emitter
RL
=
1
W
Tc
=
25°C
1200
VCE
=
0 V
800
600 V
400 V
200 V
400
4
8
12
16
100000
C – V
CE
Cies
Coes
(V)
V
CE
(V)
Gate-emitter voltage V
GE
(pF)
10000
Collector-emitter voltage
Capacitance C
Cres
1000
Common emitter
VGE
=
0
f
=
1 MHz
Tc
=
25°C
100
0.01
0
0
1200
2400
3600
4800
0
6000
0.1
1
10
100
Charge Q
G
(nC)
Collector-emitter voltage
V
CE
(V)
Short circuit SOA
6
10000
Reverse bias SOA
(x rating current)
5
(A)
Collector current
I
C
4
3
2
VCC
<
900 V
=
1
Tj
<
125°C
=
tw
=
5
ms
0
0
200
400
600
800
1000
1200
1400
1000
100
Collector current
10
Tj
<
125°C
=
VGE
= ±15
V
RG
=
2.0
W
1
0
500
1000
1500
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
R
th (t)
– t
w
1
Tc
=
25°C
Transient thermal resistance
R
th (t)
(°C/W)
0.1
Diode stage
Transistor stage
0.01
0.001
0.001
0.01
0.1
1
10
Pulse width
t
w
(s)
5
2003-03-11
MicroPython Open Source section
京公网安备 11010802033920号
EEWORLD
