BSS97 datasheet, PDF - EEWORLD Datasheet

BSS97: DescriptionPower Field-Effect Transistor, 1.5A I(D), 200V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-202; CategoryDiscrete semiconductor The transistor; File Size227KB，6 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSS97 Overview

Power Field-Effect Transistor, 1.5A I(D), 200V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-202

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	1.5 A
Maximum drain current (ID)	1.5 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	45 pF
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	10 W
Maximum pulsed drain current (IDM)	6 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	190 ns
Maximum opening time (tons)	30 ns

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