HELP4
FEATURES
TM
E800 (Band 20)
LTE Linear PAM
Data Sheet - Rev 2.3
ALT6720
• LTE Compliant
• 4th Generation HELP
TM
technology
• High Efficiency (LTE MPR = 0 dB):
36 % @ P
OUT
= +27.5 dBm
•
• 23 % @ P
OUT
= +16 dBm
16 % @ P
OUT
= +7 dBm
•
ALT6720
•
Low Quiescent Current: 3 mA
•
Low Leakage Current in Shutdown Mode: <5 µA
•
Internal Voltage Regulator
•
Integrated “daisy chainable” directional coupler
with CPL
IN
and CPL
OUT
port.
•
Internal DC block on IN/OUT RF ports
•
Optimized for a 50 Ω System
•
1.8 V Control Logic
•
RoHS Compliant Package, 260
o
C MSL-3
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
APPLICATIONS
•
Band 20 LTE Wireless Devices
PRODUCT DESCRIPTION
TM
GND at Slug (pad)
TM
The ALT6720 HELP4 PA is a 4th generation HELP
product for LTE devices operating in E800 MHz Band
20. This PA incorporates ANADIGICS’ HELP4
TM
technology to deliver exceptional efficiency at low
power levels and low quiescent current without the
need for external voltage regulators or converters.
The device is manufactured using advanced InGaP-
Plus
TM
HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Three selectable bias modes that optimize efficiency
for different output power levels and a shutdown
mode with low leakage current increase handset
talk and standby time. A “daisy chainable” directional
coupler is integrated in the module, thus eliminating
the need of an external coupler. The self-contained
3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
Ω
system.
V
BATT
1
10
V
CC
RF
IN
2
CPL
9
RF
OUT
V
MODE2
3
Bias Control
Voltage Regulation
8
CPL
IN
V
MODE1
4
7
GND
V
EN
5
6
CPL
OUT
Figure 1: Block Diagram
03/2012
ALT6720
V
BATT
1
10
9
V
CC
RF
IN
2
RF
OUT
V
MODE2
3
8
CPL
IN
V
MODE1
4
7
GND
V
EN
5
6
Figure 2: Pinout (X-ray Top View)
CPL
OUT
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
NAME
V
BATT
RF
IN
V
MODE2
V
MODE1
V
EN
CPL
OUT
GND
CPL
IN
RF
OUT
V
CC
DESCRIPTION
Battery Voltage
RF Input
Mode Control Voltage 2
Mode Control Voltage 1
PA Enable Voltage
Coupler Output
Ground
Coupler Input
RF Output
Supply Voltage
2
Data Sheet - Rev 2.3
03/2012
ALT6720
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Battery Voltage (V
BATT
)
Control Voltages (V
MODE1
, V
MODE2
, V
EN
)
RF Input Power (P
IN
)
Storage Temperature (T
STG
)
MIN
0
0
0
-
-40
MAX
+5.0
+6
+3.5
+10
+150
UNIT
V
V
V
dBm
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Enable Voltage (V
EN
)
Mode Control Voltage (V
MODE1
,V
MODE2
)
LTE/UMTS Output Power
(1, 2, 3)
LTE (MPR=0), HPM
LTE (MPR=0), MPM
LTE (MPR=0), LPM
Case Temperature (T
C
)
MIN
832
+3.1
+1.35
0
+1.35
0
26.7
-
-
-40
TYP
-
+3.4
+1.8
-
+1.8
-
27.5
16.0
7.0
-
MAX
862
+4.35
+3.1
+0.5
+3.1
+0.5
-
-
-
+90
UNIT
MHz
V
V
V
P
OUT
≤ +27.5 dBm
PA "on"
PA "shut down"
Low Bias Mode
High Bias Mode
COMMENTS
dBm
°C
TS 36.101 Rel 8
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over
the conditions defined in the electrical specifications.
Notes:
(1) LTE waveform characteristics up to 20 MHz QPSK, 18 RB’s.
(2) For 3.1 V operation P
OUT
derated 0.8 dB.
(3) For operation at +105
°C,
P
OUT
is derated by 1.0 dB.
3
Data Sheet - Rev 2.3
03/2012
ALT6720
Table 4: Electrical Specifications - LTE Operation (MPR = 0 waveform, 10 MH
Z
QPSK, 12 RB’s)
(T
C
= +25 °C, V
CC
= +3.4 V, V
BATT
= +3.4 V, V
EN
= +1.8 V, 50 Ω
system)
PARAMETER
MIN
27.5
17
10
-
-
-
-
-
-
-
-
-
32
19
13
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
30
20
13
-39
-39
-40
-40
-39
-41
-60
-60
-60
36
23
16
2.5
0.07
0.03
0.8
<5
-132
-138
-143
-50
-62
20.5
20
<0.3
MAX
33.5
23
16
-35
-35
-35
-36
-36
-36
-40
-40
-40
-
-
-
4
0.15
0.1
1.5
10
-
-
-
-
-
-
-
-
UNIT
COMMENTS
P
OUT
+27.5 dBm
+16 dBm
+7 dBm
+27.5 dBm
+16 dBm
+7 dBm
+27.5 dBm
+16 dBm
+7 dBm
+27.5 dBm
+16 dBm
+7 dBm
+27.5 dBm
+16 dBm
+7 dBm
through V
CC
pin
V
MODE1
0V
1.8 V
1.8 V
0V
1.8 V
1.8 V
0V
1.8 V
1.8 V
0V
1.8 V
1.8 V
0V
1.8 V
1.8 V
1.8 V
V
MODE2
0V
0V
1.8 V
0V
0V
1.8 V
0V
0V
1.8 V
0V
0V
1.8 V
0V
0 V
1.8 V
1.8 V
Gain
dB
LTE to LTE, E-UTRA
dBc
UTRA ACLR1
dBc
UTRA ACLR2
dBc
Power-Added Efficiency
(1)
Quiescent Current (Icq)
Low Bias Mode
Mode Control Current
Enable Current
BATT Current
Leakage Current
%
mA
mA
mA
mA
µA
through V
MODE
pins, V
MODE1,2
= +1.8 V
through V
EN
pin
through V
BATT
pin, V
MODE1,2
= +1.8 V
V
BATT
= +4.35 V, V
CC
= +4.35 V,
V
EN
= 0 V, V
MODE1,2
= 0 V
Noise Power
Harmonics
2fo
3fo, 4fo
Coupling Factor
Directivity
Daisy Chain Insertion Loss
791 - 821 MHz
dBm/Hz GPS Band, 1574 - 1577 MHz
ISM Band, 2400 - 2483.5 MHz
P
OUT
< +27.5 dBm
dBc
dB
dB
dB
698 - 2620 MHz
Pin 8 through 9, shutdown mode
P
OUT
< +27.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating conditions
Applies over full operating range
Spurious Output Level
(all spurious outputs)
Load mismatch stress with
no permanent degradation or
failure
-
-
-70
dBc
8:1
-
-
VSWR
Notes:
(1) ACLR and Efficiency measured at 847 MHz.
4
Data Sheet - Rev 2.3
03/2012
ALT6720
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown mode
by applying logic low levels (see Operating Ranges
table) to the V
EN
, V
MODE1
and V
MODE2
voltages.
Bias Modes
The power amplifier may be placed in either Low,
Medium or High Bias modes by applying the
appropriate logic level (see Operating Ranges table)
to the V
MODE
pins. The Bias Control table below lists
the recommended modes of operation for various
applications.
Three operating modes are recommended to optimize
current consumption. High Bias/High Power operating
mode is for P
OUT
levels > 16 dBm. At ~16 dBm - 7 dBm,
the PA could be switched to Medium Power Mode. For
P
OUT
levels < ~7 dBm, the PA could be switched to Low
Power Mode for extremely low current consumption.
Table 5: Bias Control
APPLICATION
Low power
(Low Bias Mode)
Med power
(Medium Bias Mode)
High power
(High Bias Mode)
Shutdown
P
OUT
LEVELS
≤ +7 dBm
≥ +7 dBm
≤ +16 dBm
≥ +16 dBm
-
BIAS
MODE
Low
Low
High
Shutdown
V
EN
+1.8 V
+1.8 V
+1.8 V
0V
V
MODE1
+1.8 V
+1.8 V
0V
0V
V
MODE2
+1.8 V
0V
0V
0V
V
CC
3.2 - 4.35 V
3.2 - 4.35 V
3.2 - 4.35 V
3.2 - 4.35 V
V
BATT
> 3.2 V
> 3.2 V
> 3.2 V
> 3.2 V
V
BATT
C6
2.2 µF
RF
IN
V
MODE2
V
MODE1
V
EN
(1)
C1
0.01µF
C5
100 pF
GND at slug
1
2
3
4
5
C3
330 pF
10
9
8
C2
0.01 µF
C4
2.2 µF ceramic
V
CC
V
BATT
RF
IN
V
MODE2
V
MODE1
V
EN
V
CC
RF
OUT
CPL
IN
RF
OUT
CPL
IN
CPL
OUT
GND
7
CPL
OUT
6
Notes:
(1) Rise and Fall time on V
EN
Control Signal must be ≤ 1.0 µS.
Figure 3: Evaluation Board Schematic
5
Data Sheet - Rev 2.3
03/2012
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