ALT6720RM45Q7 datasheet, PDF - EEWORLD Datasheet

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ALT6720RM45Q7: DescriptionNarrow Band Medium Power Amplifier, 832MHz Min, 862MHz Max, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN; CategoryWireless rf/communication Radio frequency and microwave; File Size715KB，9 Pages; ManufacturerII-VI Incorporated; Environmental Compliance

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ALT6720RM45Q7 Overview

Narrow Band Medium Power Amplifier, 832MHz Min, 862MHz Max, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN

ALT6720RM45Q7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	II-VI Incorporated
package instruction	3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN
Reach Compliance Code	unknown
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	10 dB
Maximum input power (CW)	10 dBm
Maximum operating frequency	862 MHz
Minimum operating frequency	832 MHz
Maximum operating temperature	90 °C
Minimum operating temperature	-30 °C
RF/Microwave Device Types	NARROW BAND MEDIUM POWER
Maximum voltage standing wave ratio	10

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HELP4

FEATURES

E800 (Band 20)

LTE Linear PAM

Data Sheet - Rev 2.3

ALT6720

• LTE Compliant

• 4th Generation HELP

technology

• High Efficiency (LTE MPR = 0 dB):

36 % @ P

OUT

= +27.5 dBm

•

• 23 % @ P

OUT

= +16 dBm

16 % @ P

OUT

= +7 dBm

•

ALT6720

•

Low Quiescent Current: 3 mA

•

Low Leakage Current in Shutdown Mode: <5 µA

•

Internal Voltage Regulator

•

Integrated “daisy chainable” directional coupler

with CPL

and CPL

OUT

port.

•

Internal DC block on IN/OUT RF ports

•

Optimized for a 50 Ω System

•

1.8 V Control Logic

•

RoHS Compliant Package, 260

C MSL-3

M45 Package

10 Pin 3 mm x 3 mm x 1 mm

Surface Mount Module

APPLICATIONS

•

Band 20 LTE Wireless Devices

PRODUCT DESCRIPTION

GND at Slug (pad)

The ALT6720 HELP4 PA is a 4th generation HELP

product for LTE devices operating in E800 MHz Band

20. This PA incorporates ANADIGICS’ HELP4

technology to deliver exceptional efficiency at low

power levels and low quiescent current without the

need for external voltage regulators or converters.

The device is manufactured using advanced InGaP-

Plus

HBT technology offering state-of-the-art

reliability, temperature stability, and ruggedness.

Three selectable bias modes that optimize efficiency

for different output power levels and a shutdown

mode with low leakage current increase handset

talk and standby time. A “daisy chainable” directional

coupler is integrated in the module, thus eliminating

the need of an external coupler. The self-contained

3 mm x 3 mm x 1 mm surface mount package

incorporates matching networks optimized for output

power, efficiency, and linearity in a 50

Ω

system.

BATT

CPL

OUT

MODE2

Bias Control

Voltage Regulation

CPL

MODE1

GND

CPL

OUT

Figure 1: Block Diagram

03/2012

ALT6720RM45Q7 Related Products

	ALT6720RM45Q7	ALT6720RM45P9
Description	Narrow Band Medium Power Amplifier, 832MHz Min, 862MHz Max, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN	Narrow Band Medium Power Amplifier, 832MHz Min, 862MHz Max, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN
Is it Rohs certified?	conform to	conform to
Maker	II-VI Incorporated	II-VI Incorporated
package instruction	3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN	3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, M45, 10 PIN
Reach Compliance Code	unknown	unknown
Characteristic impedance	50 Ω	50 Ω
structure	COMPONENT	COMPONENT
Gain	10 dB	10 dB
Maximum input power (CW)	10 dBm	10 dBm
Maximum operating frequency	862 MHz	862 MHz
Minimum operating frequency	832 MHz	832 MHz
Maximum operating temperature	90 °C	90 °C
Minimum operating temperature	-30 °C	-30 °C
RF/Microwave Device Types	NARROW BAND MEDIUM POWER	NARROW BAND MEDIUM POWER
Maximum voltage standing wave ratio	10	10

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