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2SA2199R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, VMN3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size80KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric Compare View All

2SA2199R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, VMN3, 3 PIN

2SA2199R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)110 MHz
Base Number Matches1
2SA2199
Transistors
General Purpose Transistor
(−50V,
−100mA)
2SA2199
Applications
Small signal low frequency amplifier
Dimensions
(Unit : mm)
VMN3
Features
1) Excellent h
FE
linearity.
2) Complements the 2SC6114.
0.1
0.22
(3)
0.16
Structure
PNP silicon epitaxial
planar transistor
0.1
1.0
0.8
(1)
(2)
0.17
0.35
0.6
(1) Base
(2) Emitter
(3) Collector
0.37
Abbreviated symbol : P
Absolute maximum
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=1ms Single pulse
∗2
Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
∗1
∗2
Limits
−50
−50
−5
−100
−200
150
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
1/3

2SA2199R Related Products

2SA2199R 2SA2199Q 2SA2199T2LR
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, VMN3, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, VMN3, 3 PIN trans pnp 50v 100ma vmn3
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 -
Contacts 3 3 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-emitter maximum voltage 50 V 50 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 180 120 -
JESD-30 code R-PDSO-F3 R-PDSO-F3 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type PNP PNP -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal form FLAT FLAT -
Terminal location DUAL DUAL -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 110 MHz 110 MHz -
Base Number Matches 1 1 -
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