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2SA2199T2LR

Description
trans pnp 50v 100ma vmn3
Categorysemiconductor    Discrete semiconductor   
File Size80KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance  
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trans pnp 50v 100ma vmn3

2SA2199T2LR Parametric

Parameter NameAttribute value
Datasheets
2SA2199
Product Photos
VMN3 Series
Standard Package8,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
Packaging-
Transistor TypePNP
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 2mA, 6V
Power - Max150mW
Frequency - Transiti110MHz
Mounting TypeSurface Mou
Package / CaseSC-72 Formed Leads
Supplier Device PackageVMN3
2SA2199
Transistors
General Purpose Transistor
(−50V,
−100mA)
2SA2199
Applications
Small signal low frequency amplifier
Dimensions
(Unit : mm)
VMN3
Features
1) Excellent h
FE
linearity.
2) Complements the 2SC6114.
0.1
0.22
(3)
0.16
Structure
PNP silicon epitaxial
planar transistor
0.1
1.0
0.8
(1)
(2)
0.17
0.35
0.6
(1) Base
(2) Emitter
(3) Collector
0.37
Abbreviated symbol : P
Absolute maximum
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=1ms Single pulse
∗2
Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
∗1
∗2
Limits
−50
−50
−5
−100
−200
150
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
1/3

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Description trans pnp 50v 100ma vmn3 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, VMN3, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, VMN3, 3 PIN
package instruction - SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts - 3 3
Reach Compliance Code - compli compli
ECCN code - EAR99 EAR99
Maximum collector current (IC) - 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 120 180
JESD-30 code - R-PDSO-F3 R-PDSO-F3
Number of components - 1 1
Number of terminals - 3 3
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - PNP PNP
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal form - FLAT FLAT
Terminal location - DUAL DUAL
transistor applications - AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 110 MHz 110 MHz
Base Number Matches - 1 1
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