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MHS2501QFK-2

Description
Transistor Output SSR, 4-Channel, 1000V Isolation, HERMETIC SEALED, FLATPACK-32
CategoryLED optoelectronic/LED    photoelectric   
File Size460KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MHS2501QFK-2 Overview

Transistor Output SSR, 4-Channel, 1000V Isolation, HERMETIC SEALED, FLATPACK-32

MHS2501QFK-2 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionHERMETIC SEALED, FLATPACK-32
Reach Compliance Codecompliant
Maximum insulation voltage1000 V
Number of components4
Maximum on-state resistance1.5 Ω
Optoelectronic device typesTRANSISTOR OUTPUT SSR
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
1 Amp SOLID STATE RELAYS
DEVICES
LEVELS AVAILABLE
MHS2501 Series
(Consult Table 3 for Part Number Designations)
COTS
CLASS H
CLASS K
FEATURES
Operates from 3.3V to 5V logic levels
Internal Switch rated for 175°C T
j
250V Operation (Note 1)
Total dose capable > 300 Krads (Note 3)
> 1000V of I/O isolation
Buffered input
Inputs protected against over voltage (ESD rating of 1C)
Preliminary SE results show no SEB through an LET of 85 (MeV / (mg / cm
2
)) at a fluence of 2e
6
ions / cm
2
DESCRIPTION:
The MHS series are Solid State Relays where the input and output circuitry are isolated from each other. The series
consists of singles, duals, quads, and octals, and provides the normally open (N.O.) function. Microsemi Solid
State Relays are designed for Space Flight Applications, and come packaged in a variety of hermetic configurations.
These units have buffered logic level inputs and can be controlled from 3.3V or 5V logic signals, thus providing
greater flexibility of design.
Table 1 – ABSOLUTE MAXIMUM RATINGS (Tc
= +25°C unless otherwise noted)
Parameters / Test Conditions
Input Voltage
Output Current (Note 2)
Output Voltage (Note 1)
Weight
Temperature Range, Base of Package
Storage Temperature Range
Lead Temperature
Junction Temperature, FET Switch
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
17
Unit
°C/W
Symbol
V
in
, V
L
Io
V
O
T
C
T
stg
T
L
T
j
Value
+15
2.25
250
-55 to
+125
-65 to
+150
300
175
Unit
Vdc
A
Vdc
Grams
°C
°C
°C
°C
T4-LDS-0153 Rev. 2 (110368)
Page 1 of 8

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