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BUP307

Description
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size164KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUP307 Overview

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel

BUP307 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codenot_compliant
Maximum collector current (IC)35 A
Collector-emitter maximum voltage1200 V
Maximum landing time (tf)300 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)310 W
Maximum rise time (tr)200 ns
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
BUP 307
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Pin 2
C
Pin 3
E
Type
BUP 307
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
V
CE
I
C
Package
TO-218 AB
Ordering Code
Q67078-A4201-A2
1200V 35A
Symbol
Values
1200
1200
Unit
V
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
35
23
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
70
46
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
23
mJ
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
310
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Dec-07-1995
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