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BUP401

Description
Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size149KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUP401 Overview

Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel

BUP401 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codenot_compliant
Maximum collector current (IC)29 A
Collector-emitter maximum voltage600 V
Maximum landing time (tf)680 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum rise time (tr)90 ns
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
BUP 401
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Type
BUP 401
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
600
600
Unit
V
Pin 2
C
Ordering Code
C67078-A4404-A2
Pin 3
E
V
CE
600V
I
C
29A
Package
TO-220 AB
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
29
18
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
56
34
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
24
mJ
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
125
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Jul-31-1996
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