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UPD442012AGY-DD10X-MJH

Description
IC,SRAM,128KX16,CMOS,TSSOP,48PIN,PLASTIC
Categorystorage    storage   
File Size257KB,28 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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UPD442012AGY-DD10X-MJH Overview

IC,SRAM,128KX16,CMOS,TSSOP,48PIN,PLASTIC

UPD442012AGY-DD10X-MJH Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeTSOP1
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time100 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize128KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD442012A-X
2M-BIT CMOS STATIC RAM
128K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The
μ
PD442012A-X is a high speed, low power, 2,097,152 bits (131,072 words by 16 bits) CMOS static RAM.
The
μ
PD442012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The
μ
PD442012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
131,072 words by 16 bits organization
Fast access time : 50, 55, 70, 85, 100, 120 ns (MAX.)
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Low voltage operation
(BB version : V
CC
= 2.7 to 3.6 V, BC version : V
CC
= 2.2 to 3.6 V, DD version : V
CC
= 1.8 to 2.2 V)
Low V
CC
data retention : 1.0 V (MIN.)
Operating ambient temperature : T
A
= –25 to +85 °C
Output Enable input for easy application
Two Chip Enable inputs : /CE1, CE2
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
voltage
V
temperature
°C
−25
to +85
At operating
mA (MAX.)
30
35
40
Note 2
Note 3
Note 4
Supply current
At standby
At data retention
μ
A (MAX.)
4
μ
A (MAX.)
2
μ
PD442012A-BBxxX
50
Note 1
, 55, 70, 85
2.7 to 3.6
μ
PD442012A-BCxxX
μ
PD442012A-DDxxX
70, 85, 100
85, 100, 120
2.2 to 3.6
1.8 to 2.2
30
15
3
Notes 1.
V
CC
3.0 V
2.
Cycle time
70 ns
3.
Cycle time = 55 ns
4.
Cycle time = 50 ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M14671EJ9V0DS00 (9th edition)
Date Published September 2006 NS CP (K)
Printed in Japan
The mark <R> shows major revised points.
2000
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

UPD442012AGY-DD10X-MJH Related Products

UPD442012AGY-DD10X-MJH UPD442012AGY-BC10X-MJH UPD442012AGY-DD85X-MJH
Description IC,SRAM,128KX16,CMOS,TSSOP,48PIN,PLASTIC 128KX16 STANDARD SRAM, 100ns, PDSO48, 12 X 18 MM, PLASTIC, TSOP1-48 IC,SRAM,128KX16,CMOS,TSSOP,48PIN,PLASTIC
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TSOP1 TSOP1 TSOP1
Contacts 48 48 48
Reach Compliance Code unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 100 ns 100 ns 85 ns
JESD-30 code R-PDSO-G48 R-PDSO-G48 R-PDSO-G48
JESD-609 code e0 e0 e0
length 18 mm 18 mm 18 mm
memory density 2097152 bit 2097152 bit 2097152 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16
Number of functions 1 1 1
Number of terminals 48 48 48
word count 131072 words 131072 words 131072 words
character code 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C -25 °C
organize 128KX16 128KX16 128KX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSSOP TSSOP TSSOP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 2.2 V 3.6 V 2.2 V
Minimum supply voltage (Vsup) 1.8 V 2.2 V 1.8 V
Nominal supply voltage (Vsup) 2 V 3 V 2 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal pitch 0.5 mm 0.5 mm 0.5 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 12 mm 12 mm 12 mm
Maker Renesas Electronics Corporation - Renesas Electronics Corporation
package instruction - TSSOP, TSSOP,
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