Bulletin I25173 rev. B 03/94
ST303S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
300A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range (*)
T
J
q
ST303S
300
65
471
7950
8320
316
288
400 to 1200
10 to 30
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AE (TO-118)
(*) t = 10 to 20µs for 400 to 800V devices
q
t = 15 to 30µs for 1000 to 1200V devices
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1
ST303S Series
Bulletin I25173 rev. B 03/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
ST303S
08
10
12
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
400
800
1000
1200
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
1100
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
50
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
670
480
230
35
50
V
DRM
50
40
I
TM
180
o
el
470
330
140
-
50
50
65
1050
1021
760
150
50
V
DRM
-
40
I
TM
100µs
940
710
470
-
50
-
65
5240
1800
730
90
50
V
DRM
-
40
I
TM
Units
4300
1270
430
-
50
-
65
V
A/µs
°C
A
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST303S
300
65
471
7950
8320
6690
7000
Units
A
°C
Conditions
180° conduction, half sine wave
DC @ 45°C case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
t
Maximum I
2
t for fusing
316
288
224
204
KA
2
s
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
3160
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
2
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ST303S Series
Bulletin I25173 rev. B 03/94
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
ST303S
2.16
1.44
1.46
0.57
Units
Conditions
I
TM
= 1255A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
t
2
I
H
I
L
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum holding current
Typical latching current
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
0.56
600
1000
mA
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST303S
1000
0.80
Min
10
q
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
t
q
q
Max. turn-off time (*)
Max
30
µs
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST303S
500
50
Units
V/µs
mA
Conditions
T
J
= T
J
max, linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST303S
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST303S Series
Bulletin I25173 rev. B 03/94
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque, ± 10%
ST303S
-40 to 125
-40 to 150
0.10
0.03
48.5
(425)
Units
°C
Conditions
DC operation
K/W
Nm
(Ibf-in)
g
See Outline Table
Non lubricated threads
Mounting surface, smooth, flat and greased
wt
Approximate weight
Case style
535
TO-209AE (TO-118)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.011
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
30
2
3
3
S
4
12
5
P
6
F
7
N
8
0
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- S = Compression bonding Stud
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
- P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M24 x 1.5
- Reapplied dv/dt code (for t
q
test condition)
- t
q
code
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A
t (µs)
dv/dt - t
q
combinations available
dv/dt (V/µs)
20
10
CN
q
12
CM
up to 800V
15
CL
20
CK
q
50
DN
DM
DL
DK
--
DP
DK
DJ
DH
100
EN
EM
EL
EK
--
--
EK
EJ
EH
200
FN *
FM
FL *
FK *
--
--
FK *
FJ *
FH
400
HN
HM
HL
HK
--
--
HK
HJ
HH
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
t (µs)
only for
1000/1200V
15
18
20
25
30
CL
CP
CK
CJ
--
*
Standard part number.
All other types available only on request.
4
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ST303S Series
Bulletin I25173 rev. B 03/94
Outline Table
CERAMIC HOUSING
22 (0.87) MAX.
4.3 (0.17) DIA.
4.5 (0.18) MAX.
MI
N.
9 .5
(0 .
37
)
WHITE GATE
10.5 (0.41)
NOM.
RED SILICON RUBBER
RED CATHODE
38 (1.50)
MAX. DIA.
255 (10.04)
245 (9.65)
245 (9.65) ± 10 (0.39)
FLEXIBLE LEAD
C.S. 50mm 2
(0.078 s.i.)
22
(
0.8
6)
WHITE SHRINK
RED SHRINK
27.5 (1.08)
MAX.
SW 45
21 (0.82) MAX.
47 (1.85)
MAX.
3/4"16 UNF-2A
49 (1.92) MAX.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
25 (0.98)
MI
N.
Fast-on Terminals
AMP. 280000-1
REF-250
38 (1.5)
77.5 (3.05)
80.5 (3.17)
DIA. MAX.
47 (1.85)
21 (0.83)
27.5 (1.08)
All dimensions in millimeters (inches)
MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
MAX.
Case Style TO-209AE (TO-118)
with top thread terminal 3/8"
MAX.
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5
ADI Reference Circuit
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