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DTB6035_13

Description
N-Channel Reduced Qg, Fast Switching MOSFET
File Size1MB,6 Pages
ManufacturerDINTEK
Websitehttp://www.daysemi.jp/
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DTB6035_13 Overview

N-Channel Reduced Qg, Fast Switching MOSFET

N-Channel Reduced Q
g
, Fast Switching MOSFET
www.din-tek.jp
DTB6035
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
(Ω)
0.028 at V
GS
= 10 V
0.04 at V
GS
=
FEATURES
I
D
(A)
7
7
4.5 V
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
D
SOT-223
D
S
S
N-Channel MOSFET
G
G
D
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
a
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
3.3
2.3
- 55 to 175
10 s
Steady State
60
± 20
7
6.1
40
15
11
1.7
1.2
6.0
5.0
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
36
75
17
Maximum
45
90
20
Unit
°C/W
1

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