d. Maximum under steady state conditions is 90 °C/W.
1
www.din-tek.jp
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 10 A, V
GS
= 0 V
- 0.78
35
25
19
16
T
C
= 25 °C
- 5.8
- 60
- 1.2
53
38
A
V
ns
nC
ns
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= 0 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
0.3
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 17.3 A
V
DS
= - 15 V, V
GS
= - 5 V, I
D
= - 17.3 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
½-
10 V, I
D
= - 13 A
V
GS
½-
6 V, I
D
= - 10 A
V
GS
½-
4.5 V, I
D
= - 8 A
V
DS
= - 15 V, I
D
= - 13 A
- 20
0.0054
0.0068
0.0083
44
4620
880
820
102
66
16
28
1.3
70
70
45
27
18
15
52
14
2.6
105
105
68
41
30
25
80
25
ns
153
80
nC
pF
0.0078
0.0082
0.0092
S
- 1.2
- 30
- 24
6
- 2.8
± 150
± 15
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTP9531
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.015
T
J
= 25
°C
10
-03
0.012
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
10
-04
10
-05
10
-06
10
-07
10
-08
0.000
0
6
12
18
24
30
V
GS
- Gate-Source Voltage (V)
10
-09
0
6
12
18
24
T
J
= 150
°C
10
-02
www.din-tek.jp
DTP9531
0.009
0.006
T
J
= 25
°C
0.003
30
36
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
60
V
GS
= 10 V thru 5 V
V
GS
= 4 V
45
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6
8
10
Gate Current vs. Gate-Source Voltage
30
4
T
C
= 25
°C
15
2
V
GS
= 3 V
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
0
T
C
= 125
°C
T
C
= - 55
°C
2
3
V
GS
- Gate-to-Source Voltage (V)
1
4
Output Characteristics
0.014
7200
Transfer Characteristics
6000
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.011
V
GS
= 4.5 V
C
iss
4800
0.008
V
GS
= 6 V
3600
2400
C
oss
1200
C
rss
0.005
V
GS
= 10 V
0.002
0
15
30
I
D
- Drain Current (A)
45
60
0
0
6
12
18
24
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
Capacitance
3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
I
D
= 17.3 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 7.5 V
4
V
DS
= 24 V
R
DS(on)
- On-Resistance (Normalized)
1.35
1.60
I
D
= 13A
www.din-tek.jp
DTP9531
V
GS
= 10 V
V
GS
= 4.5 V
1.10
0.85
2
0
0
30
60
90
120
Q
g
- Total Gate Charge (nC)
0.60
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (
°
C)
125
150
Gate Charge
100
0.020
On-Resistance vs. Junction Temperature
I
D
= 13 A
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.015
I
S
- Source Current (A)
0.010
T
J
= 125
°C
1
0.005
T
J
= 25
°C
T
J
= 25
°C
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
2
6
8
V
GS
- Gate-to-Source Voltage (V)
4
10
Source-Drain Diode Forward Voltage
2.5
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
50
40
2.15
1.8
Power (W)
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
V
GS(th)
(V)
30
20
1.45
10
1.1
- 50
0
0.01
0.1
1
Time (s)
10
100
600
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
4
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
100 μs
Limited by R
DS(on)
*
www.din-tek.jp
DTP9531
30
10
I
D
- Drain Current (A)
1 ms
10 ms
I
D
- Drain Current (A)
24
1
100 ms
1s
0.1
DC, 10 s
18
12
0.01
T
A
= 25
°C
Single Pulse
0.001
0.1
6
BVDSS Limited
0
100
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
8.8
1.8
Current Derating*
6.6
1.4
Power (W)
4.4
Power (W)
0
25
50
75
100
125
150
0.9
2.2
0.5
0
T
C
- Case Temperature (°C)
0.0
0
25
75
50
100
125
T
A
- Ambient Temperature (°C)
150
Power Junction-to-Foot
Power Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
京公网安备 11010802033920号
EEWORLD
