b. Pulse width limited by maximum junction temperature.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
120
140
62
Maximum
145
175
78
°C/W
Unit
1
www.din-tek.jp
SPECIFICATIONS
(T
A
= 25 °C, unless otherwise noted)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
= 3.6 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 2.78
I
D
3.6 A, V
GEN
= 4.5 V, R
g
= 1
8
7
30
7
8.5
2
15
15
45
15
15
4
nC
ns
Q
g
Q
gs
Q
gd
R
g
f = 1 MHz
2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.6 A
3.5
0.6
0.45
4
8
5.5
nC
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 50 °C
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10
V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 3.6 A
V
GS
= 2.5 V, I
D
= 3.1 A
V
DS
= 5 V, I
D
= 3.6 A
I
S
= 0.95 A, V
GS
= 0 V
6
0.035
0.045
13
0.7
1.2
0.040
0.055
20
0.40
0.85
± 100
0.1
4
15
A
S
V
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTS2300S
Notes:
a. Pulse test: Pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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